Siemens CFY77-10, CFY77-08 Datasheet
AlGaAs / InGaAs HEMT CFY 77
________________________________________________________________________________________________________
D a t a s h e e t
Features
*Very low noise
*Very high gain
*For low noise front end amplifiers up to 20 GHz
*For DBS down converters
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(taped)
Package 1)
CFY77-08 HG Q62702-F1549 MW-4
CFY77-10 HH Q62702-F1559 MW-4
Maximum ratings Symbol Unit
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (T
S
< 51°C)
2)
V
V
V
T
T
P
DS
DG
GS
I
D
Ch
stg
tot
3.5 V
4.5 V
-3.0 V
60 mA
150 °C
-65...+150 °C
180 mW
Thermal resistance
Channel-soldering point source
1) Dimensions see chapter Package Outlines
2) TS: Temperature measured at soldering point
Siemens Aktiengesellschaft pg. 1/4 11.01.1996
R
thChS
550 K/W
HL EH PD 21
AlGaAs / InGaAs HEMT CFY 77
________________________________________________________________________________________________________
Electrical characteristics at
T
= 25°C
A
unless otherwise specified
Characteristics Symbol min typ max Unit
Drain-source saturation current
VDS = 2 V VGS = 0 V
Pinch-off voltage
VDS = 2 V ID = 1 mA
Gate leakage current
VDS = 2 V ID = 15 mA
Transconductance
VDS = 2 V ID = 15 mA
Noise figure
VDS = 2 V ID = 15 mA f = 12 GHz
I
DSS
V
GS(P)
I
g
F
G
m
15 30 60 mA
-2 -0.7 -0.2 V
- 0.05 2 µA
50 65 - mS
dB
CFY77-08
CFY77-10
Associated gain
VDS = 2 V ID = 15 mA f = 12 GHz
CFY77-08
CFY77-10
G
-
-
a
10
9.5
0.7
0.9
10.5
10
0.8
1
dB
-
-
Siemens Aktiengesellschaft pg. 2/4 11.01.1996
HL EH PD 21
Loading...