Siemens CFY35-23, CFY35-20 Datasheet
GaAs FET CFY 35
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D a t a s h e e t
* Low noise
*High gain
*For low-noise front end amplifiers
*For DBS down converters
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(tape and reel)
CFY 35-20
CFY 35-23
NANBQ62702-F1393
Q62702-F1394
Pin Configuration
1 2 3 4
Package 1)
S D S G MW-4
Maximum ratings Symbol Value Unit
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 53°C)
2)
V
V
V
T
T
P
DS
DG
GS
I
D
Ch
stg
tot
5V
6V
-4 ... 0 V
60 mA
150 °C
-40...+150 °C
180 mW
Thermal resistance
Channel-soldering point
1) Dimensions see chapter Package Outlines
2) TS is measured on the source 1 lead at the soldering point to the PCB.
Siemens Aktiengesellschaft pg. 1/4 13.02.1996
2)
R
thChS
540 K/W
HL EH PD 21
GaAs FET CFY 35
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Electrical characteristics at
T
= 25°C, unless otherwise specified
A
Characteristics Symbol min typ max Unit
Drain-source saturation current
VDS = 2.5 V, VGS = 0 V
Pinch-off voltage
VDS = 2.5 V ID = 1 mA
Transconductance
VDS = 2.5 V I
= 10 mA
D
Gate leakage current
VDS = 2.5 V ID = 10 mA
Noise figure
V
= 2.5 V I
CFY 35-20
= 10 mA f = 12 GHz
CFY 35-23
V
I
10
25 45
mA
V
-0.2 -1.2 -2.5
g
mS
20 30 -
I
µA
- 0.1 2
F
-
-
1.9
2.2
2.0
2.3
dB
Associated gain
V
= 2.5 V I
= 10 mA f = 12 GHz
Typical Common Source Noise Parameters
ID = 10 mA VDS = 2.5 V Z0 = 50 Ω
fF
min
GHz dB dB MAG ANG
2 0.60 17.6 0.82 32 35 0.7 0.08 2.35 12.9
4 0.83 14.2 0.73 65 25 0.5 0.11 2.30 11.2
6 1.10 11.8 0.65 105 14 0.28 0.14 2.35 9.5
8 1.38 10.5 0.60 146 5.5 0.11 0.19 2.55 7.8
10 1.64 9.4 0.58 -177 3 0.06 0.22 2.80 6.5
12 1.90 8.5 0.61 -139 10 0.2 0.28 3.50 4.9
14 2.15 7.9 0.62 -110 26 0.52 0.33 3.95 3.8
G
a
G
dB
8 8.5 -
Γ
opt
R
Ω−
r
n
n
NF
50Ω
G(F
Ω)
-dB dB
Siemens Aktiengesellschaft pg. 2/4 13.02.1996
HL EH PD 21
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