Siemens CFY25-23, CFY25-20, CFY25-17 Datasheet
GaAs FET CFY 25
● Low noise
● High gain
● For front-end amplifiers
● lon-implanted planar structure
● All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
(tape and reel)
CFY 25-17
CFY 25-20
CFY 25-23
C 5
C 6
C 7
Q62703-F106
Q62703-F107
Q62703-F108
Pin Configuration
1 2 3
D S G
4
S
Package
Micro-X
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS 5V
Drain-gate voltage VDG 7
Gate-source voltage V
GS – 5 … + 0
Drain current ID 80 mA
Total power dissipation, T
S ≤ 56 ˚C
2)
Ptot 250 mW
Channel temperature Tch 150 ˚C
Storage temperature range T
stg – 65 … + 150
1)
Thermal Resistance
Channel - soldering point
1)
For detailed information see chapter Package Outlines.
2)
TS is measured on the source lead at the soldering point to the pcb.
2)
Rth chS 375 K/W
Semiconductor Group 1
07.94
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
CFY 25
Parameter Symbol
I
DSS 15 30 60
DS = 3 V, VGS = 0
V
V
p – 0.3 – 1.0 – 3.0
ID = 1 mA, VDS = 3 V
I
G – 0.1 2
D = 15 mA, VDS = 3 V
I
g
m 30 40 –
D = 15 mA, VDS = 3 V
I
F
DS = 15 mA, VDS = 3 V, f= 12 GHz CFY25-17
I
CFY25-20
CFY25-23
Associated gain
DS = 15 mA, VDS = 3 V, f= 12 GHz CFY25-17
I
G
a
CFY25-20
CFY25-23
min. typ. max.
–
–
–
9
8.5
8.5
1.6
1.9
2.2
9.5
9
9
1.7
2.0
2.3
–
–
–
UnitValues
mADrain-source saturation current
VPinch-off voltage
µAGate leakage current
mSTransconductance
dBNoise figure
Semiconductor Group 2
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