Siemens CF750 Datasheet
GaAs MMIC CF 750
________________________________________________________________________________________________________
D a t a s h e e t
* Biased Dual Gate GaAs FET
* For frequencies from 400 MHz to 3 GHz
* Mixer and amplifier applications in handheld
equipment
* Low power consumption,
2mA operating current typ.
* Operating voltage range: 3 to 6V
* Ion-implanted planar structure
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(taped)
CF 750 MX Q62702-F1391
Pin Configuration
1 2 3 4
GND D G S
Package 1)
SOT 143
Circuit diagram:
20k
G
500
5k
10pF
GND
D
S
Ω
Maximum ratings Symbol Unit
Drain-source voltage
Gate-source voltage
Drain current
V
-V
DS
GS
I
D
8V
5V
80 mA
Gate-source peak current
Channel temperature
Storage temperature range
Total power dissipat. (TS<48°C)
2)
+I
T
T
P
GSM
Ch
stg
tot
2mA
150 °C
-55 ... +150 °C
300 mW
Thermal resistance
Channel-soldering point (GND)
1) For detailed dimensions see chapter Package Outlines
2) TS: Temperature measured at soldering point
Siemens Aktiengesellschaft pg. 1/6 12.01.96
R
thChGND
340 K/W
HL EH PD 21
GaAs MMIC CF 750
________________________________________________________________________________________________________
Electrical characteristics
T
= 25°C, unless otherwise specified
A
DC characteristics Symbol min typ max Unit
Drain-Source Breakdown Voltage
ID = 500 µA, -VGS=4V
V
DS(BR)
8--V
Drain Current
V
= 0V, VDS= 3.8 V
GGND
S-pin not connected
I
DSS,P
1.6 2 2.8 mA
Drain Current
VGS= 0V, VDS= 3.8 V
S-pin connected to GND
I
DSS
-50-mA
Transconductance
ID = 10 mA, VDS = 3.8 V
S-pin connected to GND
g
m
-25-mS
Electrical characteristics of CF 750 in Amplifier Application
TA = 25 °C, V
= 3.8V, RS = RL = 50 Ω, unless otherwise specified
DGND
Amplifier Application Symbol min typ max Unit
Power Gain
ID = 2 mA, f = 900 MHz
Noise Figure
ID = 2 mA, f = 900 MHz
3rd Order Intermodulation
ID = 2 mA, f = 900 MHz
3rd Order Intermodulation
ID = 2 mA, f = 900 MHz
Power Gain
ID = 2 mA, f = 1.8 GHz
Noise Figure
ID = 2 mA, f = 1.8 GHz
3rd Order Intermodulation
ID = 2 mA, f = 1.8 GHz
G
PS
F
IPIP3
OPIP3
G
PS
F
IPIP3
-11-dB
- 1.6 - dB
- -1 - dBm
- 10 - dBm
-10-dB
- 1.9 - dB
- -1 - dBm
3rd Order Intermodulation
ID = 2 mA, f = 1.8 GHz
Siemens Aktiengesellschaft pg. 2/6 12.01.96
OPIP3
- 9 - dBm
HL EH PD 21
Loading...