Siemens CF739 Datasheet
GaAs FET CF 739
Features
● N-channel dual-gate GaAs MES FET
● Depletion mode transistor for tuned small-signal
applications up to 2 GHz, e. g. VHF, UHF,
Sat-TV tuners
● Low noise
● High gain
● Low input capacitance
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
CF 739 Q62702-F1215MS SOT-143
Marking
(tape and reel)
Pin Configuration
1 2 3
S D G24G1
Package
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS 10 V
Gate 1-source voltage – VG1S 6
Gate 2-source voltage – V
G2S 6
Drain current ID 80 mA
Gate 1-source peak current + IG1SM 1
Gate 2-source peak current + IG2SM 1
Total power dissipation, T
S ≤ 66 ˚C
2)
Ptot 240 mW
Channel temperature Tch 150 ˚C
Storage temperature range T
stg – 55 … + 150
1)
Thermal Resistance
Channel - soldering point
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3)
TS is measured on the source lead at the soldering point to the pcb.
3)
Semiconductor Group 1
RthchS ≤ 350 K/W
04.96
Electrical Characteristics
I
A = 25 ˚C, unless otherwise specified.
at T
DC Characteristics
D = 100 µA, – VG1S = – VG2S = 4 V
min. typ. max.
V
(BR)DS 10 – –
CF 739
UnitValuesParameter Symbol
VDrain-source breakdown voltage
– I
G1SS ––20
G1S = 5 V, VG2S = VDS = 0
– V
Gate 2 leakage current
G2S = 5 V, VG1S = VDS = 0
– V
G1S = 0, VG2S = 0, VDS = 3 V
V
VG2S = 0, VDS = 5 V, ID = 200 µA
Gate 2-source pinch-off voltage
– I
G2SS ––20
I
DSS 6–60
– V
G1S(P) – – 2.5
– V
G2S(P) – – 2.5
µAGate 1 leakage current
mADrain current
VGate 1-source pinch-off voltage
VG1S = 0, VDS = 5 V, ID = 200 µA
AC Characteristics
DS = 5 V, VG2S = 2 V, ID = 10 mA, f = 1 kHz
V
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz
V
Output capacitance
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz
V
g
fs –25–
C
gfss – 0.95 –
C
dss – 0.5 –
mSForward transconductance
pFGate 1 input capacitance
VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz
V
Power gain
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz
V
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz
V
Control range
G2S = 2 V … – 3 V
V
Semiconductor Group 2
F
–
–
ps
G
–
–
∆ Gpsc –50–
1.8
1.1
17
22
–
–
–
–
dBNoise figure
CF 739
Total power dissipation Ptot = f (TA*; TS)
*Package mounted on alumina
Output characteristics ID = f (VDS)
G2S = 2 V
V
Gate 1 forward transconductance
fs1 = f (VG1S)
g
DS = 5 V, f = 1 kHz
V
Gate 1 forward transconductance
fs1 = f (VG2S)
g
DS = 5 V, f = 1 kHz
V
Semiconductor Group 3
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