Siemens BUZ90A Datasheet

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

BUZ 90 A

Pin 1 Pin 2 Pin 3

G D S

Type

V

DS

I

D

R

DS(on

)

Package Ordering Code

BUZ 90 A 600 V 4 A 2 Ω TO-220 AB C67078-S1321-A3

Maximum Ratings Parameter Symbol Values Unit

Continuous drain current

T

= 30 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche current,limited by

T

jmax

Avalanche energy,periodic limited by Avalanche energy, single pulse

I

= 4.5 A,

D

L

= 29 mH,

V

= 50 V,

DD

T

= 25 °C

j

R

GS

= 25 Ω

Gate source voltage Power dissipation

T

jmax

I

D

I

Dpuls

I

AR

E

AR

E

AS

V

GS

P

tot

A

4

16

4.5 8 mJ

320

±

20 V

W

T

= 25 °C

C

Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient

T T R R

j stg

thJC thJA

75

-55 ... + 150 °C

-55 ... + 150 ≤ 1.67 K/W

75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 07/96

BUZ 90 A

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 600 V, = 600 V,

V V

GS GS

= 0 V, = 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

600 - -

2.1 3 4

-

0.1 10

1 100

- 10 100

V

µA

nA

Drain-Source on-resistance

V

= 10 V,

GS

I

= 2.8 A

D

R

DS(on)

Ω

- 1.7 2

Semiconductor Group 2 07/96

BUZ 90 A

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 2.8 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V

= 30 V,

DD

V

GS

= 10 V,

I

= 2.6 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

2.5 3.8 pF

- 780 1050

- 110 170

- 40 70 ns

R

GS

= 50

Ω

Rise time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Fall time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 2.6 A

D

I

= 2.6 A

D

I

= 2.6 A

D

t

r

t

d(off)

t

f

- 20 30

- 50 75

- 120 150

- 70 90

Semiconductor Group 3 07/96