Siemens BUZ80 Datasheet

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

BUZ 80

Pin 1 Pin 2 Pin 3

G D S

Type

BUZ 80 800 V 3.1 A 4

V

DS

I

D

R

DS(on)

Ω

Package Ordering Code

TO-220 AB C67078-S1309-A2

Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current

T

= 28 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche current,limited by

T

jmax

Avalanche energy,periodic limited by
Avalanche energy, single pulse

I

= 3.1 A,

D

L

= 62.4 mH,

V

DD

T

= 50 V,

= 25 °C

j

R

GS

= 25

Ω

Gate source voltage
Power dissipation

T

= 25 °C

C

Operating temperature

T

jmax

I

D

I

Dpuls

I

AR

E

AR

E

AS

V

GS

P

tot

T

j

A

3.1

12.5

3.1
8 mJ

320

±

20 V

W

100

-55 ... + 150 °C
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient

T
R
R

stg

thJC
thJA

-55 ... + 150

≤

1.25 K/W

75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 1 09/96

BUZ 80

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

V

GS

V

=

DS, ID

= 1 mA

Zero gate voltage drain current

V
V

DS
DS

= 800 V,
= 800 V,

V
V

= 0 V,

GS

= 0 V,

GS

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-resistance

V

= 10 V,

GS

I

= 2 A

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

800 - -

2.1 3 4

-

-

0.1
10

1
100

- 10 100

- 3.5 4

V

µA

nA

Ω

Semiconductor Group 2 09/96

BUZ 80

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 2 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 3 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

1 3.6 -

pF

- 900 1350

- 95 140

- 50 75
ns

- 15 25

Rise time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V
R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

Fall time

V
R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 3 A

D

I

= 3 A

D

I

= 3 A

D

t

r

t

d(off)

t

f

- 65 85

- 200 270

- 65 85

Semiconductor Group 3 09/96