Siemens BUP309 Datasheet

IGBT

Preliminary data

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

• Low forward voltage drop
Remark: The TO-218 AB case doesn't solve the
standards VDE 0110 and UL 508 for creeping distance

BUP 309

Pin 1 Pin 2 Pin 3

G C E

Type

V

CE

I

C

Package Ordering Code

BUP 309 1700V 25A TO-218 AB Q67078-A4204-A2

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage
Collector-gate voltage

R

= 20 kΩ

GE

Gate-emitter voltage
DC collector current

T

= 25 °C

C

T

= 90 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 90 °C

C

t

= 1 ms

p

V

CE

V

CGR

V

GE

I

C

I

Cpuls

1700 V

1700

± 20

A
25
16

50
32

Avalanche energy, single pulse

I

= 15 A,

C

L

= 200 µH,

V

CC

T

= 50 V,

= 25 °C

j

R

GE

= 25 Ω

Power dissipation

T

= 25 °C

C

Chip or operating temperature
Storage temperature

Semiconductor Group

E

AS

mJ

23

P

tot

W

310

T

j

T

stg

-55 ... + 150 °C

-55 ... + 150

1 Jul-30-1996

BUP 309

Maximum Ratings
Parameter Symbol Values Unit

DIN humidity category, DIN 40 040 - E ­IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

R

thJC

≤

0.4 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

V

=

GE

V

CE, IC

= 1 mA

Collector-emitter saturation voltage

V
V
V

GE
GE
GE

= 15 V,
= 15 V,
= 15 V,

I

= 15 A,

C

I

= 15 A,

C

I

= 15 A,

C

T

= 25 °C

j

T

= 125 °C

j

T

= 150 °C

j

Zero gate voltage collector current

V

= 1700 V,

CE

V

GE

= 0 V,

T

= 25 °C

j

V

GE(th)

V

CE(sat)

I

CES

4.5 5.5 6.5

-

-

-

-

3.5

-

4.5

1

4.2

-

-

250

V

µA

V

= 1700 V,

CE

V

GE

= 0 V,

T

Gate-emitter leakage current

V

= 20 V,

GE

V

CE

= 0 V

AC Characteristics

Transconductance

V

= 20 V,

CE

I

= 15 A

C

Input capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Output capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Reverse transfer capacitance

V

= 25 V,

CE

Semiconductor Group

V

= 0 V, f = 1 MHz

GE

= 125 °C

j

I

GES

-

-

1000

nA

- - 100

g

fs

S

- - -

C

iss

pF

- 2000 2700

C

oss

- 160 240

C

rss

- 65 100

2 Jul-30-1996