Siemens BUP306D Datasheet
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
BUP 306D
Pin 2 Pin 3
Type
V
CE
Pin 1
G C E
I
C
Package Ordering Code
BUP 306D 1200V 23A TO-218 AB Q67040-A4222-A2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 90 °C
C
Pulsed collector current,
t
= 1 ms
p
Symbol Values Unit
V
V
CE
CGR
1200 V
1200
V
I
GE
C
± 20
A
23
15
I
Cpuls
T
= 25 °C
C
T
= 90 °C
C
Diode forward current
T
= 90 °C
C
Pulsed diode current,
T
= 25 °C
C
t
= 1 ms
p
Power dissipation
T
= 25 °C
C
Chip or operating temperature
Storage temperature
Semiconductor Group
46
30
I
F
18
I
Fpuls
108
P
tot
W
165
T
j
T
stg
-55 ... + 150 °C
-55 ... + 150
1 Jul-30-1996
Maximum Ratings
BUP 306D
Parameter
Symbol Values Unit
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
Electrical Characteristics
= 25 °C, unless otherwise specified
, at T
j
Parameter
R
thJC
R
thJC
D
Symbol Values Unit
0.63 K/W
1.25
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE, IC
= 0.7 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
= 10 A,
I
C
= 25 °C
T
j
V
GE(th)
V
CE(sat)
4.5 5.5 6.5
-
2.8
3.3
V
V
GE
= 15 V,
= 10 A,
I
C
= 125 °C
T
j
Zero gate voltage collector current
= 1200 V,
V
CE
V
= 0 V,
GE
= 25 °C
T
j
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
V
CE
= 20 V,
= 10 A
I
C
Input capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Output capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
Reverse transfer capacitance
V
CE
= 25 V,
= 0 V, f = 1 MHz
V
GE
I
CES
I
GES
g
fs
C
iss
C
oss
C
rss
-
3.8
4.3
- - 0.4
- - 100
3.5 5.5 -
- 1300 1750
- 100 150
- 50 75
mA
nA
S
pF
Semiconductor Group
2 Jul-30-1996
BUP 306D
Electrical Characteristics
Parameter
= 25 °C, unless otherwise specified
, at T
j
Symbol Values Unit
Switching Characteristics, Inductive Load at
Turn-on delay time
= 600 V,
V
R
CC
Gon
= 47
Ω
V
GE
Rise time
= 600 V,
V
R
CC
Gon
= 47
Ω
V
GE
Turn-off delay time
= 600 V,
V
R
CC
Goff
= 47
Ω
V
GE
Fall time
= 600 V,
V
R
CC
Goff
= 47
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
= 10 A
I
C
= 10 A
I
C
= 10 A
I
C
= 10 A
I
C
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
T
= 125 °C
j
- 40 60
- 30 50
- 200 300
- 20 30
ns
Total turn-off loss energy
V
R
CC
Goff
= 600 V,
= 47
Ω
V
GE
= -15 V,
Free-Wheel Diode
Diode forward voltage
= 15 A,
I
F
= 15 A,
I
F
V
V
= 0 V,
GE
= 0 V,
GE
= 25 °C
T
j
= 125 °C
T
j
Reverse recovery time
= 15 A,
I
F
iF/dt = -800 A/µs
d
= 25 °C
T
j
= 125 °C
T
j
= -600 V,
V
R
V
Reverse recovery charge
= 15 A,
I
F
= 15 A,
I
F
= 0 V, diF/dt = -800 A/µs
V
R
V
= 0 V,
GE
= 25 °C
T
j
GE
= 10 A
I
C
= 0 V
E
V
t
Q
off
mWs
- 1.3 -
F
-
-
rr
-
-
rr
-
2.4
1.9
100
1
2.9
-
150
1.8
V
ns
µC
= 0 V, diF/dt = -800 A/µs,
V
R
Semiconductor Group
= 125 °C
T
j
-
3
5.4
3 Jul-30-1996
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