Siemens BUP303 Datasheet
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
BUP 303
Pin 1 Pin 2 Pin 3
G C E
Type
V
CE
I
C
Package Ordering Code
BUP 303 1000V 23A TO-218 AB Q67078-A4202-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 90 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 90 °C
C
t
= 1 ms
p
Avalanche energy, single pulse
V
CE
V
CGR
V
GE
I
C
I
Cpuls
E
AS
1000 V
1000
± 20
A
23
15
46
30
mJ
I
= 10 A,
C
L
= 3 mH,
V
= 24 V,
CC
T
= 25 °C
j
R
GE
= 25
Power dissipation
T
= 25 °C
C
Chip or operating temperature
Storage temperature
Semiconductor Group
Ω
20
P
tot
W
200
T
j
T
stg
-55 ... + 150 °C
-55 ... + 150
1 Jul-30-1996
BUP 303
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
≤
0.63 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
=
GE
V
CE, IC
= 0.7 mA
Collector-emitter saturation voltage
V
V
V
GE
GE
GE
= 15 V,
= 15 V,
= 15 V,
I
= 10 A,
C
I
= 10 A,
C
I
= 10 A,
C
T
= 25 °C
j
T
= 125 °C
j
T
= 150 °C
j
Zero gate voltage collector current
V
= 1000 V,
CE
V
GE
= 0 V,
T
= 25 °C
j
V
GE(th)
V
CE(sat)
I
CES
4.5 5.5 6.5
-
-
-
-
2.8
3.8
4
-
3.3
4.3
4.5
150
V
µA
V
= 1000 V,
CE
V
GE
= 0 V,
T
Gate-emitter leakage current
V
= 20 V,
GE
V
CE
= 0 V
AC Characteristics
Transconductance
V
= 20 V,
CE
I
= 10 A
C
Input capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Output capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Reverse transfer capacitance
V
= 25 V,
CE
Semiconductor Group
V
= 0 V, f = 1 MHz
GE
= 125 °C
j
I
GES
-
-
700
nA
- 0.1 100
g
fs
S
3.5 5.5 -
C
iss
pF
- 1300 1750
C
oss
- 100 150
C
rss
- 50 75
2 Jul-30-1996
BUP 303
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
Turn-on delay time
V
R
CC
Gon
= 600 V,
= 47
Ω
V
GE
= 15 V,
Rise time
V
R
CC
Gon
= 600 V,
= 47 Ω
V
GE
= 15 V,
Turn-off delay time
V
R
CC
Goff
= 600 V,
= 47 Ω
V
GE
= -15 V,
Fall time
V
R
CC
Goff
= 600 V,
= 47 Ω
V
GE
= -15 V,
Total turn-off loss energy
V
= 600 V,
CC
V
GE
= -15 V,
I
= 10 A
C
I
= 10 A
C
I
= 10 A
C
I
= 10 A
C
I
= 10 A
C
t
d(on)
t
r
t
d(off)
t
f
E
off
T
= 125 °C
j
- 40 60
- 30 50
- 200 300
- 20 30
ns
mWs
R
Goff
= 47 Ω
- 1.3 -
Semiconductor Group
3 Jul-30-1996
Loading...