Siemens BUP213 Datasheet

IGBT

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

BUP 213

Pin 1 Pin 2 Pin 3

G C E

Type

V

CE

I

C

Package Ordering Code

BUP 213 1200V 32A TO-220 AB Q67040-A4407-A2

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-gate voltage

R

= 20 k

GE

Ω

Gate-emitter voltage DC collector current

T

= 25 °C

C

T

= 90 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 90 °C

C

t

= 1 ms

p

Avalanche energy, single pulse

V

CE

V

CGR

V

GE

I

C

I

Cpuls

E

AS

1200 V

1200

± 20

A 32 20

64 40

mJ

I

= 15 A,

C

L

= 200 µH,

V

CC

T

= 50 V,

= 25 °C

j

R

GE

= 25

Power dissipation

T

= 25 °C

C

Chip or operating temperature Storage temperature

Semiconductor Group

Ω

22

P

tot

W

200

T

j

T

stg

-55 ... + 150 °C

-55 ... + 150

1 Nov-30-1995

BUP 213

Maximum Ratings Parameter Symbol Values Unit

DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

IGBT thermal resistance, chip case

R

thJC

≤

0.63 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

V

=

GE

V

CE, IC

= 0.35 mA

Collector-emitter saturation voltage

V V V V

GE GE GE GE

= 15 V, = 15 V, = 15 V, = 15 V,

I

= 15 A,

C

I

= 15 A,

C

I

= 30 A,

C

I

= 30 A,

C

T

= 25 °C

j

T

= 125 °C

j

T

= 25 °C

j

T

= 125 °C

j

Zero gate voltage collector current

V

GE(th)

V

CE(sat)

I

CES

4.5 5.5 6.5

-

2.7

3.3

3.4

4.3

3.2

3.9

-

V

mA

V

= 1200 V,

CE

V

GE

= 0 V,

T

Gate-emitter leakage current

V

= 25 V,

GE

V

CE

= 0 V

AC Characteristics

Transconductance

V

= 20 V,

CE

I

= 15 A

C

Input capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Output capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Reverse transfer capacitance

V

= 25 V,

CE

Semiconductor Group

V

= 0 V, f = 1 MHz

GE

= 25 °C

j

- - 0.8

I

GES

nA

- - 100

g

fs

S

- 12 -

C

iss

pF

- 1000 1350

C

oss

- 150 225

C

rss

- 70 100

2 Nov-30-1995

BUP 213

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at

Turn-on delay time

V R

CC

Gon

= 600 V,

= 82

Ω

V

GE

Rise time

V R

CC

Gon

= 600 V,

= 82 Ω

V

GE

Turn-off delay time

V R

CC

Goff

= 600 V,

= 82 Ω

V

GE

Fall time

V R

CC

Goff

= 600 V,

= 82 Ω

V

GE

= 15 V,

= -15 V,

I

= 15 A

C

I

= 15 A

C

I

= 15 A

C

I

= 15 A

C

t

d(on)

t

r

t

d(off)

t

f

T

= 125 °C

j

- 70 100

- 45 70

- 400 530

- 70 95

ns

Semiconductor Group

3 Nov-30-1995