Siemens BUP202 Datasheet

IGBT

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

BUP 202

Pin 1 Pin 2 Pin 3

G C E

Type

V

CE

I

C

Package Ordering Code

BUP 202 1000V 12A TO-220 AB Q67078-A4401-A2

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-gate voltage

R

= 20 k

GE

Ω

Gate-emitter voltage DC collector current

T

= 25 °C

C

T

= 90 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 90 °C

C

t

= 1 ms

p

Avalanche energy, single pulse

V

CE

V

CGR

V

GE

I

C

I

Cpuls

E

AS

1000 V

1200

± 20

A

12

8

24 16

mJ

I

= 5 A,

C

L

= 3.3 mH,

V

CC

= 24 V,

T

= 25 °C

j

R

GE

= 25

Power dissipation

T

= 25 °C

C

Chip or operating temperature Storage temperature

Semiconductor Group

Ω

10

P

tot

W

100

T

j

T

stg

-55 ... + 150 °C

-55 ... + 150

1 Dec-06-1995

BUP 202

Maximum Ratings Parameter Symbol Values Unit

DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

IGBT thermal resistance, chip case

R

thJC

≤

1 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

V

=

GE

V

CE, IC

= 0.3 mA

Collector-emitter saturation voltage

V V V

GE GE GE

= 15 V, = 15 V, = 15 V,

I

= 5 A,

C

I

= 5 A,

C

I

= 5 A,

C

T

= 25 °C

j

T

= 125 °C

j

T

= 150 °C

j

Zero gate voltage collector current

V

= 1000 V,

CE

V

GE

= 0 V,

T

= 25 °C

j

V

GE(th)

V

CE(sat)

I

CES

4.5 5.5 6.5

-

2.8

3.8 4

1

3.3

4.3

4.5

100

V

µA

V

= 1000 V,

CE

V

GE

= 0 V,

T

Gate-emitter leakage current

V

= 20 V,

GE

V

CE

= 0 V

AC Characteristics

Transconductance

V

= 20 V,

CE

I

= 1.5 A

C

Input capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Output capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Reverse transfer capacitance

V

= 25 V,

CE

Semiconductor Group

V

= 0 V, f = 1 MHz

GE

= 125 °C

j

I

GES

-

300

nA

- 0.1 100

g

fs

S

1.7 2.5 -

C

iss

pF

- 650 870

C

oss

- 50 80

C

rss

- 20 30

2 Dec-06-1995

BUP 202

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at

Turn-on delay time

V R

CC

Gon

= 600 V,

= 68

Ω

V

GE

= 15 V,

Rise time

V R

CC

Gon

= 600 V,

= 68 Ω

V

GE

= 15 V,

Turn-off delay time

V R

CC

Goff

= 600 V,

= 68 Ω

V

GE

= -15 V,

Fall time

V R

CC

Goff

= 600 V,

= 68 Ω

V

GE

= -15 V,

Total turn-off loss energy

V

= 600 V,

CC

V

GE

= -15 V,

I

= 5 A

C

I

= 5 A

C

I

C

I

C

I

C

= 5 A

t

d(on)

t

r

t

d(off)

t

f

E

off

T

= 125 °C

j

- 30 50

- 20 30

- 180 270

- 15 25

ns

mWs

R

Goff

= 68 Ω

- 0.7 -

Semiconductor Group

3 Dec-06-1995