Siemens BUP200D Datasheet
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
BUP 200 D
Pin 1 Pin 2 Pin 3
G C E
Type
V
CE
I
C
Package Ordering Code
BUP 200 D 1200V 3.6A TO-220 AB Q67040-A4420-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-gate voltage
R
= 20 k
GE
Ω
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 90 °C
C
Pulsed collector current,
T
= 25 °C
C
T
= 90 °C
C
Diode forward current
t
= 1 ms
p
V
CE
V
CGR
V
GE
I
C
I
Cpuls
I
F
1200 V
1200
± 20
A
3.6
2.4
7.2
4.8
T
= 90 °C
C
Pulsed diode current,
T
= 25 °C
C
t
= 1 ms
p
Power dissipation
T
= 25 °C
C
Chip or operating temperature
Storage temperature
Semiconductor Group
8
I
Fpuls
48
P
tot
W
50
T
j
T
stg
-55 ... + 150 °C
-55 ... + 150
1 Dec-06-1995
BUP 200 D
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
IGBT thermal resistance, chip case
Diode thermal resistance, chip case
R
R
thJC
thJC
3.1 K/W
D
3.1
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
=
GE
V
CE, IC
= 0.1 mA
Collector-emitter saturation voltage
V
V
GE
GE
= 15 V,
= 15 V,
I
= 1.5 A,
C
I
= 1.5 A,
C
T
= 25 °C
j
T
= 125 °C
j
Zero gate voltage collector current
V
= 1200 V,
CE
V
GE
= 0 V,
T
= 25 °C
j
Gate-emitter leakage current
V
GE(th)
V
CE(sat)
I
CES
I
GES
4.5 5.5 6.5
-
-
2.8
3.8
3.3
4.3
- - 0.275
V
mA
nA
V
= 20 V,
GE
V
CE
= 0 V
AC Characteristics
Transconductance
V
= 20 V,
CE
I
= 1.5 A
C
Input capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Output capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Reverse transfer capacitance
V
= 25 V,
CE
Semiconductor Group
V
= 0 V, f = 1 MHz
GE
- - 100
g
fs
S
- 0.6 -
C
iss
pF
- 225 320
C
oss
- 25 40
C
rss
- 13 24
2 Dec-06-1995
BUP 200 D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
Turn-on delay time
V
R
CC
Gon
= 600 V,
= 100
Ω
V
GE
= 15 V,
Rise time
V
R
CC
Gon
= 600 V,
= 100
Ω
V
GE
= 15 V,
Turn-off delay time
V
R
CC
Goff
= 600 V,
= 100 Ω
V
GE
= -15 V,
Fall time
V
R
CC
Goff
= 600 V,
= 100 Ω
V
GE
= -15 V,
Total turn-off loss energy
V
= 600 V,
CC
V
GE
= -15 V,
I
= 1.5 A
C
I
= 1.5 A
C
I
= 1.5 A
C
I
= 1.5 A
C
I
= 1.5 A
C
t
d(on)
t
r
t
d(off)
t
f
E
off
T
= 125 °C
j
- 30 50
- 20 30
- 170 250
- 15 25
ns
nS
ns
mWs
R
= 100 Ω
Goff
Free-Wheel Diode
Diode forward voltage
I
= 4 A,
F
I
= 4 A,
F
V
V
GE
GE
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
Reverse recovery time
I
= 4 A,
F
d
iF/dt = -800 A/µs
T
= 25 °C
j
T
= 125 °C
j
V
= -300 V,
R
V
GE
Reverse recovery charge
I
= 4 A,
F
d
iF/dt = -800 A/µs
T
= 25 °C
j
T
= 125 °C
j
V
= -300 V,
R
V
GE
= 0 V
= 0 V
V
t
Q
- 0.25 -
F
-
-
rr
-
-
rr
-
-
2.3
1.9
60
1
3
-
100
-
1.8
V
ns
µC
Semiconductor Group
3 Dec-06-1995
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