Siemens BTS734L1 Datasheet

Smart Two Channel Highside Power Switch

PROFET® BTS 734 L1

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection

(including load dump)

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Undervoltage and overvoltage shutdown

with auto-restart and hysteresis

•

Open drain diagnostic output

•

Open load detection in ON-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

1

)

protection

bb

Product Summary

Overvoltage Protection Operating voltage

On-state resistance Nominal load current Current limitation

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays, fuses and discrete circuits

V

bb(AZ)

V

bb(on)

43 V

5.0 ... 34 V

active channels: one two parallel

R

ON

I

L(NOM)

I

L(SCr)

40 20

4.8 7.3 A 19 19 A

m

Ω

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

Pin Definitions and Functions

Pin Symbol Function

1,10, 11,12, 15,16, 19,20 3 IN1 Input 1,2, activates channel 1,2 in case of 7 IN2 logic high signal 17,18 OUT1 Output 1,2, protected high-side power output 13,14 OUT2 of channel 1,2. Design the wiring for the max.

4 ST1 Diagnostic feedback 1,2 of channel 1,2, 8 ST2 open drain, low on failure 2 GND1 Ground 1 of chip 1 (channel 1) 6 GND2 Ground 2 of chip 2 (channel 2) 5,9 N.C. Not Connected

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance

short circuit current

Pin configuration

Vbb1

GND1 2 19 V

IN1 3 18 OUT1

ST1 4 17 OUT1

N.C. 5 16 V

GND2 6 15 V

IN2 7 14 OUT2

ST2 8 13 OUT2

N.C. 9 12 V

Vbb10 11 V

•

(top view)

20 V

bb bb

)

1

With external current limit (e.g. resistor R connection, reverse load current limited by connected load.

=150 Ω) in GND connection, resistor in series with ST

GND

Semiconductor Group 1 10.96

Block diagram

Two Channels; Open Load detection in on state;

3

4

1

Signal GND

Chip 1

IN1

ST1

GND1

ESD

Voltage

source

V

Logic

Voltage

sensor

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Chip 1

Current

limit

unclamped

ind. loads

Open load

detection

Gate

protection

Limit for

Temperature

sensor

R

O1

GND1

BTS 734 L1

+ V

bb

Leadframe

OUT1

17,18

Load GND

Load

7

8

6

Signal GND

Chip 2

Logic and protection circuit of chip 2

(equivalent to chip 1)

IN2

ST2

GND2

Chip 2

PROFET



Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

R

O2

GND2

+ V

Leadframe

bb

OUT2

13,14

Load

Load GND

Maximum Ratings

at

= 25°C unless otherwise specified

j

T

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

V V

bb bb

43 V 34 V

Semiconductor Group 2

BTS 734 L1

)

Maximum Ratings at

T

= 25°C unless otherwise specified

j

Parameter Symbol Values Unit

Load current (Short-circuit current, see page 5)

)

Load dump protection

)

3

R

= 2 Ω,

I

t

= 200 ms; IN = low or high,

d

each channel loaded with

2

V

LoadDump

R

= 2.8 Ω,

L

=

U

+

V

,

A

U

s

Operating temperature range Storage temperature range Power dissipation (DC) (all channels active)

5)

T T

= 13.5 V

A

= 25°C:

a

= 85°C:

a

I

L

V

Load dump

T

j

T

stg

P

tot

self-limited A

)

4

-40 ...+150

60 V

°C

-55 ...+150

3.8

W

2.0

Inductive load switch-off energy dissipation, single pulse V

= 12V,

bb

I

= 4.8 A, Z

L

I

= 7.3 A, Z

L

see diagrams on page 10

Electrostatic discharge capability (ESD

T

= 150°C5),

j,start

= 44 mH, 0 Ω one channel:

L

= 44 mH, 0 Ω two parallel channels:

L

E

V

AS

ESD

0.65

1.5

1.0 kV

(Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagram page 8

V I I

IN ST

IN

-10 ... +16 V ±2.0

mA

±5.0

J

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance junction - soldering point

junction - ambient

)

2

Supply voltages higher than V 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.

3)

R

= internal resistance of the load dump test pulse generator

I

4)

V

Load dump

)

5

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air. See page 16

)

6

Soldering point: upper side of solder edge of device pin 15. See page 16

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

5)

5),6)

each channel:

one channel active:

all channels active:

require an external current limit for the GND and status pins, e.g. with a

bb(AZ)

R

thjs

R

thja

2

(one layer, 70µm thick) copper area for V

-- -- 11

--

40 33

K/W

--

bb

Semiconductor Group 3

Electrical Characteristics

BTS 734 L1

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the two channels

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT) IL = 2 A each channel,

two parallel channels,

T

= 25°C:

j

T

= 150°C:

j

T

= 25°C:

j

Nominal load current one channel active:

two parallel channels active:

Device on PCB5),

T

= 85°C,

a

T

≤ 150°C

j

Output current while GND disconnected or pulled

up; V

= 30 V,

bb

Turn-on time Turn-off time IN to 10%

R

= 12 Ω

L

T

,

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 0, see diagram page 9

IN

)

7

IN to 90%

=-40...+150°C

j

7)

V V

7)

OUT

R

,

R

L

= 12 Ω

T

,

=-40...+150°C:

j

T

=-40...+150°C:

j

V V

OUT OUT

: :

Symbol Values Unit

min typ max

R

ON

I

L(NOM)

I

L(GNDhigh)

t

on

t

off

dV/dt

on

-dV/dt

off

--

36 67

18

4.4

6.7

4.8

7.3

-- -- 10 mA

80 80

180 250

350 450

0.1 -- 1 V/µs

mΩ

40 75

20

-- A

µs

Operating Parameters

)

Operating voltage

8

Undervoltage shutdown Undervoltage restart

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

Undervoltage restart of charge pump see diagram page 14

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

= 40 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

9

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C: ∆

j

T

=-40...+150°C:

j

Standby current, all channels off V

= 0

IN

)

7

See timing diagram on page 12.

8)

At supply voltage increase up to

9)

see also

V

ON(CL)

in circuit diagram on page 8.

V

= 5.6 V typ without charge pump,

bb

=-40...+25°C:

j

T

=+150°C:

j

T

=25°C

j

T

=150°C:

j

:

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

V

5.0 --

3.5 --

-- -- 5.0

-- 5.6 7.0 V

-- 0.2 -- V

34 -33 -- -- V

-- 0.5 -- V

42 47 -- V

OUT

--

≈

V

bb

16 24

- 2 V

34 V

5.0 V

7.0

43 V

40

µA

50

V

Semiconductor Group 4

BTS 734 L1

)

j

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

Leakage output current (included in

= 0

=

I

GND1

+

I

GND2

10)

,

V

IN

,

IN

V

Operating current

I

GND

each of the two channels

I

bb(off

= 5V,

=-40...+150°C

T

one channel on:

two channels on:

Protection Functions

Initial peak short circuit current limit,

diagrams, page 13)

each channel,

(see timing

two parallel channels

Repetitive short circuit current limit,

T

=

T

each channel

j

jt

two parallel channels

(see timing diagrams, page 13)

Initial short circuit shutdown time

T T

(see page 11 and timing diagrams on page 13)

Output clamp (inductive load switch off) at V

ON(CL)

= Vbb - V

OUT

Thermal overload trip temperature Thermal hysteresis

)

=-40°C:

j

T

=25°C:

j

T

=+150°C:

j

T

=-40°C:

j,start

= 25°C:

j,start

11)

Symbol Values Unit

min typ max

I

L(off)

I

GND

I

L(SCp)

-- -- 20

--

47 35 21

1.8

3.6

55 44 26

µ

48mA

66 54 34

twice the current of one channel

I

L(SCr)

t

off(SC)

V

ON(CL)

T

jt

∆T

jt

--

19 19

2.5

--

3

----ms

41 47 -- V

150 -- -- °C

-- 10 -- K

A

Reverse Battery

)

Reverse battery voltage Drain-source diode voltage

= - 4.8 A,

L

I

)

10

Add

11

12

)

I

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest V

ON(CL)

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8).

ST

, if

j

T

I

ST

= +150°C

> 0

12

(V

out

> Vbb)

-

V

bb

-

V

ON

-- -- 32 V

-- 600 -- mV

Semiconductor Group 5