Datasheet BTS730 Datasheet (Siemens)

PWM Power Unit

)

(

)

(

)

j

g

The device allows continuous power control for lamps,LEDs or inductive loads.

•

Highside switch

•

Overtemperatur protection

•

Short circuit / overload protection through pulse width reduction and overload shutdown

•

Load dump protection

•

Undervoltage and overvoltage shutdown with auto-restart and hysteresis

•

Reverse battery protection

•

Timing frequency adjustable

•

Controlled switching rise and fall times

•

Maximum current internally limited

•

Protection against loss of GND

•

Electrostatic discharge (ESD) protection

•

Package: P-DSO-20-6 (SMD)

1)

2)

BTS 730

Note:

Switching frequency is programmed with an external capacitor.

Type Ordering Code Marking Package

BTS730 Q67060-S7007-A2 - P-DSO-20-6

Maximum Ratings

Parameter Symbol Values Unit Active overvoltage prodection Short circuit current Input current (DC Pin1

C

and pin19

t

V

C

Operating temperature range Storage temperature range

3)

Power dissipation

T

=25°C

a

T

=85°C 2 W

a

Thermal resistance chip-case chip-ambient

3)

V

bb (AZ

I

SC

I

Ct

I

VC

T T

st

P

tot

R

th JC

R

th JA

>40 V self-limited 2 mA 2 mA

-40...+150 °C

-50...+150 3 W

≤ ≤

35 75

K/W

1)

With 150Ω resistor in signal GND connection.

2)

Potential between signal GND and load GND >0.5V

3)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2(one layer,70µm thick) copper area for V conection, PCB is vertical without air blowing.

bb

Semiconductor Group 1 12.96

Block Diagram

y

(

)

g

Overvoltage Prodtection

Over / Undervoltage Detection

Temperature Sensor

(4,5,6,7)

(14,15,16,17)

BTS 730

V

bb

(18)

GND

Timing Generator

Pulse - width

Comparator

Logic

Current Limiting

Voltage Regulator

Pump and

(1) (20) (19) (2)

t REF

VVC

C

B1

(3)

(8,9,10,11,12,13)

C

B2

Timing

Cap.

25k68nF

Bootstrap Capacitor 22nF

nal GND Load GND

Si

OUT

V V V

REF

C

bb bb bb bb

(top view)

Pin Definitions and Funktions

Pin Symbol Funktions

1 2

3 4,5,6,7 14,15,16,1 7 8,9,10 OUT Output 11,12,13 18 GND Ground 19 20

Semiconductor Group 2

C

t

Timing capacitor for frequenc

C C V

B1 B2 bb

Bootstrap capacitor Supply voltage

Leadframe connected

V V

C REF

Voltage for PWM-Control Reference Voltage

Pin Configuration

C

t

1

%

C C V V V V

B1 B2 bb bb bb bb

2 19 3 18 GND 4 17 5 16 6 15

7 14 OUT 8 13 OUT OUT 9 12 OUT OUT 10 11OUT

20

BTS 730

1)

2) )

)

(on)

(

)

j

Electrical Characteristics

T

at

j

Parameter Symbol Values Unit

On-state resistance

I

=3A,

L

Operating voltage

T

= -40 ...+150iC

j

Nominal current, calculated value ISO-standard:

Vbb-V Load current limit

V

-

V

bb

Undervoltage shutdown

I

= 3A

L

Overvoltage shutdown

I

= 3A

L

Max.output voltage (RMS)

I

= 3A,

L

Reference voltage

= 10mA

I

REF

Reference current pin 18 (GND) to pin 20 (V Internal current

consumption during operation, measured in PWM gap

Bootstrap voltage, pin 2 (

C

B1

= 12 V,

V

bb

PWM frequency

= -40 ... +150 °C,

T

c

Max. pulse duty factor

= 3A,

I

L

Min. pulse duty factor

= 3A,

I

L

Slew rate "on" du/d 10 ... 90% Slew rate "off" du/d 90 ... 10% Thermal overload trip

temperature

1)

Note:

2)

Note:

i

= 25

) to pin 3 (

C, unless otherwise specified.C

V

=12V

bb

≤ 0.5V, Tc=85°C

OUT

> 1V

OUT

> 12 V

V

bb

)

C

B2

=0V , (50%

V

C

=0V , (50%

V

C

I

OUT

I

OUT

undervoltage shutdown overvoltage shutdown

REF

= 68 nF

C

t

V

OUT

V

OUT

Bootstrap

= 22nF

min. typ. max.

R

ON

V

bb

I

-ISO 3 - - A

L

I

LLim

V

bb(LOW

V

bb(HI

V

RMSmax

V

REF

I

REF

5.9

3 4.2 5.4 V

17 18 19 V

12 - 14 V

2 3 V

- - 70

16.9

- 20 - A

- 150 - mA

) short

I

R

V

B

f

PWM

D

imax

50 - 100 Hz

95 98 - %

- 5 mA

- 10 - V

)

D

imin

- 8 14 %

)

t

off

T

20 - 120

150 - - °C

mΩ

V

mV/µs

Semiconductor Group 3

Circuits

BTS 730

Analog Logic-Input

V

REF

V

C

GND

(20)

(19)

(18)

V

Triangular Waveform

(19)

C

Voltage Regulator

µ

2

A

Pulse-width Comparator

6V max. 2mA

Generator Input

V

bb

C

(1)

t

µ

6

A

C

t

(1)

Timing Generator

6V

GND

(18)

max. 2mA

Voltage Sensor (typ)

Undervoltage Sensor Overvoltage Sensor

V

+V

< 4.2 V

bb

Signal to the logic unit

V

+V

bb

> 18 V

Signal to the logic unit

GND

Semiconductor Group 4

GND

Application Note

Dimming of dashboard lighting

4,5,6,7

14,15,16,17

220nF

BTS 730

+

V

bb

20

V

REF

k25

O

19

V

C

GND

150

O

Resistor for reverse battery and load dump prodection

O

Package Outline

18

V

bb

BTS730

68nF

O

C

t

123

150

P-DSO-20-6

B1

22nF

C

OUT

B2

8,9,10

11,12,13

Load

Dimensions in mm

Semiconductor Group 5

BTS 730

Typ.on-state resistance

Ω

m

140

120

100

80

60

40

20

-50 -25 0 25 50 75 100 125 150

R

ON

= f(

T

)

C

TC °C

Typ. Load current limit

I

A

30

25

20

15

10

5

-50 - 25 0 25 50 75 100 125 150

LLim

= f(

T

)

C

TC °C

Typ. undervoltage shutdow n

V

6,0

5,5

5,0

4,5

4,0

3,5

3,0

-50 -25 0 25 50 75 100 125 150

bb(LOW)

= f(

T

)

C

TC °C

Typ. overvoltage shut dow n

V

20,0

19,5

19,0

18,5

18,0

17,5

17,0

-50 -25 0 25 50 75 100 125 150

bb(HI)

= f(

T

)

C

TC °C

Semiconductor Group 6

BTS 730

Typ. min. puls duty factor

%

15

14

13

12

11

10

9

8

7

6

5

-50 -25 0 25 50 75 100 125 150

D

im in

= f(

T

)

C

TC °C

Typ. max. puls dut y factor

%

100

99

98

97

96

95

-50 -25 0 25 50 75 100 125 150

D

im ax

= f(

T

)

C

TC °C

Typ. PWM Frequency

Hz

100

90

80

70

60

50

-50 -25 0 25 50 75 100 125 150

f

PWM

= f(

T

)

C

TC °C

Typ. max. output volt age

V

14,0

13,5

13,0

12,5

12,0

V

RMSm ax

-50 -25 0 25 50 75 100 125 150

= f(

T

), Vbb > 12V

C

TC °C

Semiconductor Group 7