Datasheet BTS707 Datasheet (Siemens)

Smart Two Channel Highside Power Switch

PROFET® BTS 707

Features

•

Overload protection

•

Current limitation

•

Short-circuit protection

•

Thermal shutdown

•

Overvoltage protection

•

Fast demagnetization of inductive loads

•

Reverse battery protection

•

Open drain diagnostic output

•

Open load detection in OFF-state

•

CMOS compatible input

•

Loss of ground and loss of V

•

Electrostatic discharge (ESD) protection

1

)

protection

bb

Product Summary

Overvoltage Protection Operating voltage

active channels: one two parallel On-state resistance Nominal load current

R

ON

I

L(NOM)

V

bb(AZ)

V

bb(on)

65 V

5.8 ... 58 V

250 125

1.9 2.8 A

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

Most suitable for inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

m

Ω

Pin Definitions and Functions

Pin Symbol Function

1,10, 11,12, 15,16, 19,20 3 IN1 Input 1,2, activates channel 1,2 in case of 7 IN2 logic high signal 17,18 OUT1 Output 1,2, protected high-side power output 13,14 OUT2 of channel 1,2. Design the wiring for the max.

4 ST1 Diagnostic feedback 1,2 of channel 1,2, 8 ST2 open drain, low in on state on failure or high in

2 GND1 Ground 1 of chip 1 (channel 1) 6 GND2 Ground 2 of chip 2 (channel 2) 5,9 N.C. Not Connected

V

bb

Positive power supply voltage. Design the

wiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance

short circuit current

off state on failure

Pin configuration

Vbb1

GND1 2 19 V

IN1 3 18 OUT1

ST1 4 17 OUT1

N.C. 5 16 V

GND2 6 15 V

IN2 7 14 OUT2

ST2 8 13 OUT2

N.C. 9 12 V

Vbb10 11 V

•

(top view)

20 V

bb bb

)

1

With external current limit (e.g. resistor R connection, reverse load current limited by connected load.

=150 Ω) in GND connection, resistor in series with ST

GND

Semiconductor Group 1 08.96

Block diagram

Voltage

source

Voltage

sensor

IN1

3

ESD

ST1

4

V

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Limit for

unclamped

ind. loads

Open load

detection

Gate

protection

Temperature

sensor

+ V

bb

OUT1

BTS 707

Leadframe

17,18

Load

SignalGND

Chip 1

SignalGND

Chip 2

1

7

8

6

GND1

IN2

ST2

GND2

Short circuit

detection

Chip 1

Logic and protection circuit of chip 2

(equivalent to chip 1)

Chip 2

PROFET

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20



+ V

bb

OUT2

Load GND

Leadframe

13,14

Load

Load GND

Maximum Ratings

at

= 25°C unless otherwise specified

j

T

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection

T

= -40 ...+150°C

j,start

Load current (Short-circuit current, see page 5) Operating temperature range Storage temperature range

V V

I T T

bb bb

L

j stg

self-limited A

-40 ...+150

-55 ...+150

65 V 40 V

°C

Semiconductor Group 2

BTS 707

)

at

T

Maximum Ratings Parameter Symbol Values Unit

= 25°C unless otherwise specified

j

Power dissipation (DC) (all channels active) Electrostatic discharge capability (ESD

(Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagram page 7

2)

T

= 25°C:

a

T

= 85°C:

a

IN, ST:

P

V

tot

ESD

1.6

1.0

3

W

kV

tbd (>1.0)

V I I

IN IN ST

-0.5 ... +36 V ±2.0

mA

±5.0

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

Thermal resistance junction - soldering point

junction - ambient

2)

2),3)

each channel:

one channel active:

all channels active:

R R

thjs thja

-- -- 18

--

45 37

K/W

--

Electrical Characteristics

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the two channels

Symbol Values Unit

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT) IL = 2 A each channel,

V

= 24 V

bb

two parallel channels,

Nominal load current one channel active:

T

= 25°C:

j

T

= 150°C:

j

T

= 25°C:

j

R

ON

I

L(NOM)

two parallel channels active: Device on PCB2), Output current while GND disconnected or pulled

up; V

)

2

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air. See page 12

)

3

Soldering point: upper side of solder edge of device pin 15. See page 12

= 32 V,

bb

T

= 85°C,

a

V

= 0, see diagram page 8

IN

T

≤ 150°C

j

I

L(GNDhigh)

2

(one layer, 70µm thick) copper area for V

min typ max

--

1.60

2.4

225 400

113

1.9

2.8

250 500

125

-- A

-- -- 1.1 mA

mΩ

bb

Semiconductor Group 3

BTS 707

j

Parameter and Conditions,

at Tj = 25 °C,

Turn-on time

V

= 12 V unless otherwise specified

bb

each of the two channels

to 90%

Turn-off time to 10%

R

= 12

L

V

,

= 20 V

bb

Ω

T

=-40...+150°C

,

j

Slew rate on 10 to 30%

V

OUT

R

= 12

,

L

V

,

= 20 V

bb

T

=-40...+150°C:

j

,

Ω

Slew rate off 70 to 40%

V

OUT

,

R

= 12

L

V

,

= 20 V

bb

T

=-40...+150°C:

j

,

Ω

Operating Parameters

)

Operating voltage Undervoltage shutdown Undervoltage restart

4

T

=-40...+150°C:

j

T

=-40...+150°C:

j

T

=-40...+150°C:

j

Undervoltage restart of charge pump see diagram page 11

T

=-40...+150°C:

j

Undervoltage hysteresis

V

∆

bb(under)

Overvoltage protection

I

= 40 mA

bb

=

V

bb(u rst)

-

V

bb(under)

)

5

T

=-40...+150°C:

j

Standby current, all channels off V

= 0

IN

Operating current 6),

I

=

I

+

GND

GND1

I

GND2

V

= 5V,

IN

,

=-40...+150°C

T

=150°C:

j

one channel on:

two channels on:

V V

OUT OUT

Symbol Values Unit

min typ max

: :

t

on

t

off

dV/dt

-dV/dt

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

V

∆

bb(under)

V

bb(AZ)

I

bb(off)

on

off

15 20

--

80 70

-- -- 6 V/µs

-- -- 7 V/µs

5.8 --

2.7 --

58 V

4.7 V

-- -- 4.9 V

-- 5.6 7.5 V

-- 0.4 -- V

65 70 -- V

--

20 70

--

I

GND

--

2.2

4.4

µ

A

µ

----mA

s

Protection Functions

Initial peak short circuit current limit,

diagrams, page 9)

each channel,

two parallel channels

Output clamp (inductive load switch off) at V

ON(CL)

= Vbb - V

OUT

Thermal overload trip temperature Thermal hysteresis

4)

At supply voltage increase up to

5)

see also

)

6

Add

)

7

If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest V

ON(CL)

V

, if

I

ST

in circuit diagram on page 7.

ON(CL)

> 0

I

ST

(see timing

=-40°C:

j

T

=25°C:

j

T

=+150°C:

j

T

7)

I

V T

∆T

= 5.6 V typ without charge pump,

V

bb

L(SCp)

ON(CL)

jt

--

4.0

--

10

--

twice the current of one channel

59 -- 75 V

150 -- -- °C

-- 10 -- K

≈

V

OUT

V

bb

- 2 V

Semiconductor Group 4

19

A

--

BTS 707

Parameter and Conditions,

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

each of the two channels

Reverse Battery

)

Reverse battery voltage

8

Diagnostic Characteristics

Open load detection current Open load detection voltage

T

=-40..+150°C:

j

Short circuit detection voltage (pin 3 to 5)

)

Input and Status Feedback

9

Input resistance

(see circuit page 7)

Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current On state input current Delay time for status with open load

(see timing diagrams, page 10)

Status output (open drain)

Zener limit voltage ST low voltage

=-40...+150°C,

T

j

=-40...+150°C,

T

j

I

ST

I

ST

= 0.4 V:

V

IN

= 2.5 V:

V

IN

= +1.6 mA: = +1.6 mA:

Symbol Values Unit

min typ max

-

V

bb

I

L(off)

V

OUT(OL)

V

ON(SC)

R

I

V

IN(T+)

V

IN(T-)

∆

V

IN(T)

I

IN(off)

I

IN(on)

t

d(ST OL3)

V

ST(high)

V

ST(low)

-- -- 32 V

-- 6 --

µ

2.4 3 4 V

-- 2.5 --

-- 20 -- k 1 -- 2.5 V

0.8 -- -- V

-- 0.5 -- V 1--30

10 25 70

µ µ

-- 200 --

5.4

--

6.1

--

0.4

A

V

Ω

A A

s

µ

V

)

8

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 7).

9)

If ground resistors R

are used, add the voltage drop across these resistors.

GND

Semiconductor Group 5

BTS 707

Truth Table

Channel 1 Channel 2

Normal operation Open load L

Short circuit to GND Short circuit to V

bb

Overtemperature Undervoltage Overvoltage no overvoltage shutdown,

Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. The status outputs ST1 and ST2 have to be configured as a 'Wired OR' function with a single pull-up resistor.

Input 1 Output 1 Status 1 Input 2

level

L

H

L

H

L

H

L

H

L

H

Output 2 Status 2

level

L H Z H L L H H L L L L

BTS 707

L H H H

L

L H H

L

see normal operation

Terms

I

bb

V

bb

I

IN1

3

I

ST1

V

4

ST1

R

V

IN1

Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External R

optional; two resistors R

GND

battery protection up to the max. operating voltage.

PROFET

GND1

Leadframe

V

bb

Chip 1

GND1

2

I

GND1

OUT1

I

L1

17,18

GND1

V

, R

V

ON1

OUT1

GND2

PROFET

GND2

Leadframe

V

bb

Chip 2

GND2

6

I

GND2

OUT2

I

IN2

7

I

ST2

V

8

ST2

R

V

IN2

= 150 Ω or a single resistor R

I

V

L2

13,14

= 75 Ω for reverse

GND

ON2

V

OUT2

Semiconductor Group 6

BTS 707

I

IN1 or IN2

Input circuit (ESD protection),

R

IN

I

ESD-ZD

I

GND

ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Status output,

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R

ST1 or ST2

R

ST(ON)

GND

ESD-

ZD

+5V

ST

ST(ON)

< 0 Ω at

1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of

the zener voltage (increase of up to 1 V).

Short Circuit detection

Fault Signal at ST-Pin: the PROFET itself, external switch off recommended!

V

> 2.5 V typ, no switch off by

ON

+ V

bb

Inductive and overvoltage output clamp,

OUT1 or OUT2

+V

bb

V

Z

V

ON

OUT

PROFET

Power GND

V

clamped to

ON

V

ON(CL)

= -- V typ.

Overvoltage protection of logic part

GND1 or GND2

+ V

bb

V

Z2

PROFET

GND

R

GND

Signal GND

,

R

V

= 6.1 V typ., V

Z1

= 150

R

GND

R

I

IN

Logic

ST

V

Z1

= 70 V typ., RI = 20 kΩ typ.

Z2

, R

Ω

= 15 kΩ nominal.

ST

V

ON

OUT

Logic

unit

Short circuit

detection

Semiconductor Group 7

Open-load detection,

OUT1 or OUT2

OFF-state diagnostic condition:

V

> 3 V typ.; IN low

OUT

OFF

Logic

unit

Open load

detection

I

L(OL)

Signal GND

V

OUT

BTS 707

GND disconnect

V

IN

ST

VbbV

IN

V

ST

Any kind of load. In case of IN = high is Due to V

>

0, no VST = low signal available.

GND

bb

PROFET

GND

V

GND

OUT

V

OUT

≈

GND disconnect with GND pull up

V

IN

ST

bb

PROFET

GND

OUT

Inductive load switch-off energy dissipation

E

bb

E

AS

E

V

IN

=

V

-

IN

V

IN(T+)

.

ST

bb

PROFET

GND

OUT

L

Z

L

{

R

L

Energy stored in load inductance:

/

2

·L·

2

I

L

1

=

E

L

While demagnetizing load inductance, the energy dissipated in PROFET is

= Ebb + EL - ER= ∫ V

E

AS

with an approximate solution for R

·

I

L

(

=

E

AS

V

+ |V

OUT(CL)

bb

·

R

2

L

|)

ON(CL)

>

L

ln

(1+

0

·

iL(t) dt,

Ω

:

|V

OUT(CL)

·

I

R

L

Load

E

L

E

R

L

)

|

V

bb

V

IN

Any kind of load. If V Due to V

> 0, no VST = low signal available.

GND

ST

GND

>

V

GND

-

V

IN

V

IN(T+)

device stays off

Vbb disconnect with energized inductive load

high

V

bb

IN

ST

For an inductive load current up to the limit defined by E (max. ratings ) each switch is protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load the whole load current flows through the GND connection.

V

bb

PROFET

GND

OUT

AS

Semiconductor Group 8

BTS 707

Timing diagrams

Both channels are symmetric and consequently the diagrams are valid for channel 1 and channel 2

Figure 1a: V

turn on, :

bb

IN

t

V

bb

OUT

d(bb IN)

A

ST open drain

A

in case of too early

t

approx. 150 µs

d(bb IN)

V

=high the device may not turn on (curve A)

IN

Figure 2a: Switching an inductive load

Figure 3a: Short circuit:

shut down by overtempertature, reset by cooling

IN

V

OUT

normal

operation

I

L

t

ST

Heating up requires several milliseconds, depending on external conditions. External shutdown in response to status fault signal recommended.

Output sho r t to GND

I

L(SCp)

I

L(SCr)

t

IN

ST

V

OUT

I

L

t

Semiconductor Group 9

BTS 707

Figure 4a: Overtemperature:

T

Reset if

T

<

j

jt

IN

ST

V

OUT

T

J

Figure 5b: Open load, : detection in OFF-state, open load occurs in off-state

IN

ST

V

OUT

V

OUT(OL)

I

normal

L

t

*) *)

open

normal

t

Figure 5a: Open load, : detection in OFF-state, turn on/off to open load

IN

t

ST

d(ST OL3)

V

OUT

I

L

open

normal

*)

t impedance *)

depends on external circuitry because of high

d(ST,OL3)

I

= 6 µA typ

L

*) IL = 6 µA typ

Figure 6a: Undervoltage:

IN

V

bb

V

OUT

ST open drain

t

V

bb(under)

V

bb(u cp)

V

bb(u rst)

t

Semiconductor Group 10

Figure 6b: Undervoltage restart of charge pump

V

on

BTS 707

off-state

V

bb(u

V

bb(under)

charge pump starts at

V

bb(u cp)

V

bb(ucp)

on-state

=5.6 V typ.

Figure 7a: Overvoltage, no shutdown:

IN

V

bb

V

ON(CL)

V

bb

V

OUT

V

OUT(OL)

ST

t

Semiconductor Group 11

Package and Ordering Code

BTS 707

Standard P-DSO-20-9

BTS 707 Q67060-S7010-A2

All dimensions in millimetres

1) Does not include plastic or metal protrusions of 0.15 max per side

2) Does not include dambar protrusion of 0.05 max per side

Definition of soldering point with temperature Ts: upper side of solder edge of device pin 15.

Ordering Code

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm max. power dissipation P I

L(NOM)

2

active heatsink area) as a reference for

, nominal load current

and thermal resistance R

tot

thja

Semiconductor Group 12