Siemens BSS129 Datasheet
SIPMOS Small-Signal Transistor BSS 129
● V
● I
D
● R
● N channel
● Depletion mode
● High dynamic resistance
● Available grouped in V
Type Ordering
BSS 129 Q62702-S015 E6288: 1500 pcs/reel;
DS
DS(on)
240 V
0.15 A
20 Ω
Code
GS(th)
Tape and Reel
Information
1
Pin Configuration Marking Package
123
G D S SS 129 TO-92
2 reels/carton; gate first
BSS 129 Q67000-S116 E6296: 1500 pcs/reel;
2 reels/carton; source first
Maximum Ratings
Parameter Symbol Values Unit
3
2
Drain-source voltage
Drain-gate voltage,
R
= 20 kΩ V
GS
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
Pulsed drain current,
Max. power dissipation,
T
= 37 ˚C I
A
T
= 25 ˚C I
A
T
= 25 ˚C P
A
Operating and storage temperature range
Thermal resistance, chip-ambient
V
V
V
D
D puls
T
j
R
DS
DGR
GS
gs
tot
, T
thJA
stg
240 V
240
± 14
± 20
0.15 A
0.45
1.0 W
– 55 … + 150 ˚C
≤ 125 K/W
(without heat sink)
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Semiconductor Group 1 04.97
BSS 129
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
= − 3 V, ID = 0.25 mA
GS
Gate threshold voltage
V
= 3 V, ID = 1 mA
DS
Drain-source cutoff current
V
= 240 V, VGS = − 3 V
DS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V, VDS = 0
GS
Drain-source on-resistance
V
= 0 V, ID = 0.014 A
GS
Dynamic Characteristics
Forward transconductance
V
≥ 2 × ID× R
DS
DS(on)max
, ID = 0.25 A
Input capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0, VDS = 25 V, f = 1 MHz
GS
Turn-on time
V
=30V,VGS = − 2 V ... + 5 V, RGS =50Ω,
DD
I
=0.25 A
D
Turn-off time
V
=30V,VGS = − 2 V ... + 5 V, RGS =50Ω,
DD
I
=0.25 A
D
t
, (ton = t
on
t
, (t
off
+ tr) t
d(on)
= t
off
+ tf) t
d(off)
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iiss
C
oss
C
rss
d(on)
t
r
d(off)
t
f
V
240 – –
− 1.8 − 1.2 − 0.7
–
–
–
–
100
200
nA
µA
nA
– 10 100
Ω
– 7.0 20
S
0.14 0.2 –
pF
– 110 150
–2030
–710
–46ns
–1015
–1520
–2535
Semiconductor Group 2
Loading...