Siemens BSS110 Datasheet
BSS 110
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
Type
BSS 110 -50 V -0.17 A 10
= -0.8...-2.0 V
GS(th)
V
DS
I
D
R
DS(on)
Ω
Package Marking
TO-92 SS 110
Type Ordering Code Tape and Reel Information
BSS 110 Q62702-S500 E6288
BSS 110 Q62702-S278 E6296
BSS 110 Q67000-S568 E6325
Pin 1 Pin 2 Pin 3
S G D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Ω
Gate source voltage
Continuous drain current
T
= 35 °C
A
DC drain current, pulsed
T
= 25 °C
A
Power dissipation
T
= 25 °C
A
Symbol Values Unit
V
V
DS
DGR
-50 V
-50
V
I
GS
D
±
20
A
-0.17
I
Dpuls
-0.68
P
tot
W
0.63
Semiconductor Group
1 12/05/1997
Maximum Ratings
BSS 110
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Symbol Values Unit
T
T
R
j
stg
thJA
-55 ... + 150 °C
-55 ... + 150
≤
200
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
= -0.25 mA,
I
D
= 25 °C
T
j
Gate threshold voltage
V
GS
=
V
DS, ID
= -1 mA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= -50 V,
= -50 V,
= -25 V,
V
V
V
GS
GS
GS
= 0 V,
= 0 V,
= 0 V,
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= -10 V,
= -0.17 A
I
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
-50 - -
-0.8 -1.5 -2
-
-
-
-0.1
-2
-
-1
-60
-0.1
- -1 -10
- 5.3 10
K/W
V
µA
nA
Ω
Semiconductor Group
2 12/05/1997
BSS 110
Electrical Characteristics,
Parameter
Dynamic Characteristics
Transconductance
≥
2
V
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
GS
= 0 V,
= -25 V, f = 1 MHz
V
DS
Output capacitance
V
GS
= 0 V,
= -25 V, f = 1 MHz
V
DS
Reverse transfer capacitance
V
GS
= 0 V,
= -25 V, f = 1 MHz
V
DS
Turn-on delay time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
Rise time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
Turn-off delay time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
Fall time
V
R
DD
= 50
G
= -30 V,
Ω
V
GS
= -10 V,
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
g
fs
= -0.17 A
C
iss
0.05 0.09 -
- 30 40
C
oss
- 17 25
C
rss
- 8 12
t
d(on)
= -0.27 A
I
D
- 7 10
t
r
= -0.27 A
I
D
- 12 18
t
d(off)
= -0.27 A
I
D
- 10 13
t
f
= -0.27 A
I
D
- 20 27
S
pF
ns
Semiconductor Group
3 12/05/1997
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