Siemens BSS100 Datasheet
BSS 100
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
Type
BSS 100 100 V 0.22 A 6
= 0.8...2.0V
V
DS
I
D
R
DS(on)
Ω
Package Marking
TO-92 SS 100
Type Ordering Code Tape and Reel Information
BSS 100 Q62702-S499 E6288
BSS 100 Q62702-S007 E6296
BSS 100 Q62702-S206 E6325
Pin 1 Pin 2 Pin 3
S G D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R
GS
= 20 k
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
T
= 33 °C
A
DC drain current, pulsed
T
= 25 °C
A
Power dissipation
T
= 25 °C
A
Symbol Values Unit
V
V
DS
DGR
100 V
100
V
V
I
GS
gs
D
±
±
14
20
A
0.22
I
Dpuls
0.9
P
tot
W
0.63
Semiconductor Group
1 12/05/1997
Maximum Ratings
BSS 100
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Symbol Values Unit
T
T
R
j
stg
thJA
-55 ... + 150 °C
-55 ... + 150
≤
200
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
= 0.25 mA,
I
D
= 25 °C
T
j
Gate threshold voltage
V
GS
=
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
V
DS
DS
DS
= 100 V,
= 100 V,
= 20 V,
V
V
V
GS
GS
= 0 V,
GS
= 0 V,
= 0 V,
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
V
GS
GS
= 10 V,
= 4.5 V,
= 0.22 A
I
D
= 0.22 A
I
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
100 - -
0.8 1.5 2
-
-
-
0.1
2
1
1 µA
60
10
- 1 10
-
-
3.5
5
6
10
K/W
V
nA
nA
Ω
Semiconductor Group
2 12/05/1997
BSS 100
Electrical Characteristics,
Parameter
Dynamic Characteristics
Transconductance
≥
2
V
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
= 25 V, f = 1 MHz
V
DS
Output capacitance
V
= 0 V,
GS
= 25 V, f = 1 MHz
V
DS
Reverse transfer capacitance
V
= 0 V,
GS
= 25 V, f = 1 MHz
V
DS
Turn-on delay time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
Rise time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
Turn-off delay time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
Fall time
V
R
DD
G
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
D
= 25°C, unless otherwise specified
at
T
j
Symbol Values Unit
min. typ. max.
g
fs
= 0.22 A
C
iss
0.08 0.22 -
- 65 85
C
oss
- 10 15
C
rss
- 4 6
t
d(on)
= 0.28 A
- 5 8
t
r
= 0.28 A
- 5 8
t
d(off)
= 0.28 A
- 10 13
t
f
= 0.28 A
- 12 16
S
pF
ns
Semiconductor Group
3 12/05/1997
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