Siemens BSP92 Datasheet
BSP 92
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
Type
BSP 92 -240 V -0.2 A 20
= -0.8...-2.0 V
GS(th)
V
DS
I
D
R
DS(on)
Ω
Package Marking
SOT-223 BSP 92
Type Ordering Code Tape and Reel Information
BSP 92 Q62702-S653 E6327
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
Drain-gate voltage
R
= 20 k
GS
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
T
= 35 °C
A
DC drain current, pulsed
T
= 25 °C
A
Power dissipation
T
= 25 °C
A
V
DS
V
DGR
V
GS
V
gs
I
D
I
Dpuls
P
tot
-240 V
-240
±
20
±
A
-0.2
-0.8
W
1.7
Semiconductor Group 1 18/02/1997
BSP 92
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Thermal resistance, junction-soldering point
1)
T
T
R
R
j
stg
thJA
thJS
-55 ... + 150 °C
-55 ... + 150
≤ 72 K/W
≤
12
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
V
V
= 0 V,
GS
I
= -0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= -1 mA
Zero gate voltage drain current
V
= -240 V,
DS
V
= -240 V,
DS
V
= -60 V,
DS
V
V
V
GS
= 0 V,
GS
= 0 V,
GS
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
T
= 25 °C
j
Gate-source leakage current
V
= -20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
= -10 V,
GS
I
= -0.2 A
D
V
GS(th)
I
DSS
I
GSS
R
DS(on)
-240 - -
-0.8 -1.5 -2
-
-
-
-0.1
-10
-
-1
-100
-0.2
- -10 -100
- 12 20
µA
nA
Ω
Semiconductor Group 2 18/02/1997
BSP 92
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= -0.2 A
Input capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
GS
= -30 V,
= 50
Ω
V
GS
= -10 V,
I
D
= -0.25 A
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
0.06 0.13 pF
- 95 130
- 20 30
- 10 15
ns
- 8 12
Rise time
V
R
DD
GS
= -30 V,
= 50
Ω
V
GS
Turn-off delay time
V
R
DD
GS
= -30 V,
= 50 Ω
V
GS
Fall time
V
R
DD
GS
= -30 V,
= 50 Ω
V
GS
= -10 V,
= -10 V,
= -10 V,
I
= -0.25 A
D
I
= -0.25 A
D
I
= -0.25 A
D
t
r
t
d(off)
t
f
- 25 40
- 25 33
- 42 55
Semiconductor Group 3 18/02/1997
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