Siemens BSP62, BSP61, BSP60 Datasheet

PNP Silicon Darlington Transistors BSP 60

… BSP 62

● High collector current

● Low collector-emitter saturation voltage

● Complementary types: BSP 50 … BSP 52 (NPN)

Type Ordering Code

Marking

(tape and reel)

BSP 60
BSP 61
BSP 62

BSP 60
BSP 61
BSP 62

Q62702-P1166
Q62702-P1167
Q62702-P1168

Pin Configuration

1 2 3 4

B C E C

Package

SOT-223

Maximum Ratings
Parameter Symbol Values Unit

BSP 60 BSP 6180BSP 62

Collector-emitter voltage VCER V
Collector-base voltage VCB0
Emitter-base voltage VEB0

45 60
60 80 90

5
Collector current IC A1
Peak collector current I

CM 2

Base current IB 0.1
Total power dissipation, T

S = 124 ˚C Ptot W

1.5

1)

Junction temperature Tj ˚C
Storage temperature range T

stg

150

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Junction - soldering point R

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

Rth JA ≤ 72 K/W

th JS ≤ 17

5.91

Electrical Characteristics

I
I

I

I

I
I

I

I

I

I
I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BSP 60

… BSP 62

UnitValuesParameter Symbol

min. typ. max.

Collector-emitter breakdown voltage

C = 10 mA, R

= 150 Ω BSP 60

BE

Collector-base breakdown voltage

C = 100 µA, IB = 0 BSP 60

Emitter-base breakdown voltage

E = 100 µA, IB = 0

CE = VCERmax, VBE = 0

V

Emitter-base cutoff current

EB = 4 V, IC = 0

V

DC current gain

C = 150 mA, VCE = 10 V
C = 500 mA, VCE = 10 V

2)

Collector-emitter saturation voltage

C = 500 mA, IB = 0.5 mA
C = 1 A, IB = 1 mA

Base-emitter saturation voltage

C = 500 mA, IB = 0.5 mA
C = 1 A, IB = 1 mA

1)

BSP 61
BSP 62

BSP 61
BSP 62

2)

2)

45
60
80

(BR)CB0

V

60
80
90

V

(BR)EB0 5––

I

CES ––10

I

EB0 ––10

FE

1000
2000––

V

CEsat

–
–

V

BEsat

–
–

–
–
–

–
–
–

–
–
–

–
–
–

–
–

–
–

–
–

1.3

1.8

1.9

2.2

VV(BR)CER

µACollector-emitter cutoff current

–h

V

AC characteristics

C = 100 mA, VCE = 5 V, f = 100 MHz

Switching times

C = 500 mA, IB1 = IB2 = 0.5 mA

(see diagrams)

f

T – 200 –

ton
toff

–
–

400
1500––

MHzTransition frequency

ns
ns

1)

Compare RBE for thermal stability.

2)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2