Siemens BSP550 Datasheet

MiniPROFET

)

•

High-side switch

•

Short-circuit protection

•

Input protection

•

Overtemperature protection with hysteresis

•

Overload protection

•

Overvoltage protection

•

Switching inductive load

•

Clamp of negative output voltage with inductive loads

•

Undervoltage shutdown

•

Maximum current internally limited

•

Electrostatic discharge (ESD) protection

•

Reverse battery protection

1)

Mini PROFET® BSP 550

4

3

2

1

Package: SOT 223

Type

Ordering code

Pins

1234

OUT GND IN V

BSP 550

Q67000-S311

Maximum Ratings Parameter Symbol Values Unit

Supply voltage range Load current self-limited Maximum input voltage

2)

Maximum input current Inductive load switch-off energy dissipation single pulse

I

= 1.0A ,

L

T

= 85°C

A

Operating temperature range Storage temperature range Max. power dissipation (DC) Electrostatic discharge capability (ESD)

3)

T

= 25 °C

A

4)

V I V I E

T T P V

L

IN

bb

IN

AS

j stg

tot ESD

-0.3...48 V

I

L(SC

-5.0...

V

bb

±5 mA

0.3 J

-40 ...+125

-55 ...+150

1.4 W ±1kV

bb

A V

°C

Thermal resistance chip - soldering point:

chip - ambient

Voltage

ESDDiode

R

in

IN

3

1)

With resistor R

limited by connected load.

2)

At V

> Vbb, the input current is not allowed to exceed ±5 mA.

IN

3)

BSP 550 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V

4)

HBM according to MIL-STD 883D, Methode 3015.7

=150 Ω in GND connection, resistor in series with IN connections reverse load current

GND

Voltage

ESD

source

sensor

Logic

Overvoltage

protection

V

Logic

Charge pump

Level shifter

Rectifier

GND

2

Current

Signal GND

limit

unclamped

ind. loads

protection

Limit for

3)

Gate

Temperature

connection

bb

R

thJS

R

thJA

+ V

sensor

MINI-PROFET

bb

OUT

4

1

Load GND

Load

70

7

K/W

Semiconductor Group 1 06.96

BSP 550

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

T

at

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1)

I

= 1.0 A,

L

Nominal load current (pin 4 to 1) ISO Standard:

T

= 85 °C

S

Turn-on time to 90% Turn-off time to 10%

R

= 24 Ω

L

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 24V unless otherwise specified

bb

V

= high

in

5)

V

OUT

ON

R

,

=

= 24 Ω

L

R

L

V

-

bb

= 24 Ω

V

OUT

= 0.5 V

T

= 25°C

j

T

= 125°C

j

V V

OUT OUT

R

ON

I

L(ISO)

t

on

t

off

dV /dt

-dV/dt

on

off

min typ max

----0.16

--

0.2

0.38

1.7 -- -- A

--

60 90

100 150

-- 2 4 V/µs

Ω

µs

Input

Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage

V

= 18...30V

bb

T

= -25...+125°C

j

Input turn-off threshold voltage

V

= 18...30V

bb

T

= -25...+125°C

j

Input threshold hysteresis Off state input current (pin 3)

On state input current (pin 3)

Input resistance

V

IN(off)

V

= -25...+125°C

T

j

= 3.0 V to

IN(on)

= -25...+125°C

T

j

= -25...+125°C

T

j

= 1.82 V

V

bb

V

IN

V

IN(T+)

V

IN(T-)

∆V I

IN(off)

I

IN(on)

R

IN

IN(T)

-3.0 --

V

bb

V

-- -- 3.0 V

1.82 -- -- V

-- 0.1 -- V

20 -- --

-- -- 110

1.5 2.8 3.5 k

A

µ

A

µ

Ω

5

)

characterizes the MOSFET part of the device and may be higher than the shortcircuit

I

L(ISO)

Semiconductor Group 2

current of the whole device

I

L(SC)

BSP 550

∆

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Operating Parameters

= 24V unless otherwise specified

V

bb

min typ max

Operating voltage Undervoltage shutdown Undervoltage restart

T

=-25...+125°C

j

T

=-25...+125°C

j

T

=-25...+125°C:

j

Undervoltage hysteresis Standby current (pin 4),

Operating current (pin 2), leakage current (pin 1)

V

in

= low

in

V

= high

in

= low

T

=-25...+100°C

j

T

=125°C

j

T

=-25...+125°C

j

T

=-25...+125°C

j

Protection Functions

Current limit (pin 4 to 1)

Overvoltage protection

I

bb

=4mA

T

j

T

= -25...+125°C =-25...+125°C

j

Output clamp (ind. load switch off)

V

OUT

=

V

bb

-

V

ON(CL),

I

bb

= 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation

T

= 85 °C, single pulse,

j Start

I

= 1.0 A,

L

V

bb

= 25°C

j

7)

= 12 V

V

bb(on)

V

bb(under)

V

bb(u rst)

V

∆

bb(under

)

I

bb(off)

6)

I

GND

I

L(off)

I

L(SC)

V

bb(AZ)

V

ON(CL)

T

jt

T

jt

E

AS

12 40 V

7 -- 10.5 V

-- -- 11 V

-- 0.4 -- V

-- 10 25

µ

50

-- 1 1.6 mA

-- -- 2

1.4

2.5

--

4.0

4.8

µ

48 -- -- V

--

72

-- V

135 150 -- °C

-- 10 -- K

-- -- 0.3

A

J

Reverse Battery

)

2 L

* (

8

T

= 25°C

A

V

>

V

OUT

= 125°C caused by temperature sense current

j

E

V

ON(CL)

V

ON(CL)-Vbb

)

AS

= ∫(V

bb

ON(CL)

-V

bb

-I

S

-V

ON

* iL(t) dt,

Reverse battery voltage Continious reverse drain current Drain-Source diode voltage IF = 1 A,

6)

increase of standby current at T

7)

while demagnetizing load inductance, dissipated energy is approx.

8)

Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

V

in

E

= 1/2 * L * I

AS

= low

30 V

-- -- 1 A

-- -- 1.2 V

Semiconductor Group 3