Siemens BSP51, BSP50 Datasheet
NPN Silicon Darlington Transistors BSP 50
… BSP 52
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BSP 60 … BSP 62 (PNP)
Type Ordering Code
BSP 50
BSP 51
BSP 52
Marking
BSP 50
BSP 51
BSP 52
(tape and reel)
Q62702-P1163
Q62702-P1164
Q62702-P1165
Pin Configuration
1 2 3 4
B C E C
Package
SOT-223
Maximum Ratings
Parameter Symbol Values Unit
BSP 50 BSP 5180BSP 52
Collector-emitter voltage VCER V
Collector-base voltage VCB0
Emitter-base voltage VEB0
45 60
60 80 100
5
Collector current IC A1
Peak collector current I
CM 2
Base current IB 0.1
Total power dissipation, T
S = 124 ˚C Ptot W
1.5
1)
Junction temperature Tj ˚C
Storage temperature range T
stg
150
– 65 … + 150
Thermal Resistance
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 72 K/W
th JS ≤ 17
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BSP 50
… BSP 52
UnitValuesParameter Symbol
min. typ. max.
Collector-emitter breakdown voltage
C = 10 mA BSP 50
Collector-base breakdown voltage
C = 100 µA, IB = 0 BSP 50
Emitter-base breakdown voltage
E = 100 µA, IB = 0
CE = VCERmax, VBE = 0
V
Emitter-base cutoff current
EB = 4 V, IC = 0
V
DC current gain
C = 150 mA, VCE = 10 V
C = 500 mA, VCE = 10 V
2)
Collector-emitter saturation voltage
C = 500 mA, IB = 0.5 mA
C = 1 A, IB = 1 mA
Base-emitter saturation voltage
C = 500 mA, IB = 0.5 mA
C = 1 A, IB = 1 mA
1)
BSP 51
BSP 52
BSP 51
BSP 52
2)
2)
45
60
80
(BR)CB0
V
60
80
100
V
(BR)EB0 5––
I
CES ––10
I
EB0 ––10
FE
1000
2000––
V
CEsat
–
–
V
BEsat
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.3
1.8
1.9
2.2
VV(BR)CER
µACollector-emitter cutoff current
–h
V
AC characteristics
C = 100 mA, VCE = 5 V, f = 100 MHz
Switching times
C = 500 mA, IB1 = IB2 = 0.5 mA
(see diagrams)
f
T – 200 –
ton
toff
–
–
400
1500––
MHzTransition frequency
ns
ns
1)
Compare RBE for thermal stability.
2)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
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