Siemens BSP452 Datasheet

MiniPROFET

•

High-side switch

•

Short-circuit protection

•

Input protection

•

Overtemperature protection with hysteresis

•

Overload protection

•

Overvoltage protection

•

Switching inductive load

•

Clamp of negative output voltage with inductive loads

•

Undervoltage shutdown

•

Maximum current internally limited

•

Electrostatic discharge (ESD) protection

•

Reverse battery protection

Package: SOT 223

1)

Mini PROFET® BSP 452

4

3

2

1

Type

BSP 452

Ordering code

Q67000-S271

Application

•

µC compatible power switch for 12 V DC grounded loads

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically
integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

Blockdiagramm:

+ V

bb

Voltage

source

ESD­Diode

R

in

IN

3

ESD

V

Logic

Voltage

sensor

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Temperature

sensor

4

OUT

1

Load

GND

MINI-PROFET

2

Load GND

1)

With resistor R

limited by connected load.

=150 Ω in GND connection, resistor in series with IN connections reverse load current

GND

Signal GND

Semiconductor Group 1 08.96

Mini PROFET® BSP 452

)

)

Pin Symbol Function

1 OUT O Output to the load
2 GND - Logic ground
3 IN I Input, activates the power switch in case of logical high signal
4 Vbb + Positive power supply voltage

at

= 25 °C unless otherwise specified

T

Maximum Ratings
Parameter Symbol Values Unit

Supply voltage
Load current self-limited
Maximum input voltage
Maximum input current
Inductive load switch-off energy dissipation,
single pulse
(not tested, specified by design)
Load dump protection

=2Ω ,

R

I

=400ms, IN= low or high,

t

d

(not tested, specified by design)
Electrostatic discharge capability (ESD

Operating temperature range
Storage temperature range
Max. power dissipation (DC)

j

2)

)

3

V

I

= 0.5A ,

L

LoadDump

6)

=

U

A

U

T

A

+

V

s RL

=12V

A

5)

PIN 1,2,4

T

A

= 150°C

= 24Ω

= 80Ω

R

L

PIN 3

= 25 °C

V

bb

I

L

V

IN

I

IN

E

AS

V

Load dump

V

ESD

T

j

T

stg

P

tot

)

4

40 V

I

L(SC

-5.0...

V

bb

±5 mA

0.5 J

47
67

±1
±2

-40 ...+150

-55 ...+150

1.8 W

A
V

V

kV

°C

Thermal resistance chip - soldering point:

chip - ambient:

2)

At VIN > Vbb, the input current is not allowed to exceed ±5 mA.

3)

Supply voltages higher than V

A resistor for the protection of the input is integrated.

4)

V

Load dump

5)

HBM according to MIL-STD 883D, Methode 3015.7

6)

BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection

bb(AZ)

R

6)

R

Semiconductor Group 2

thJS
thJA

70

7

K/W

Mini PROFET® BSP 452

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

T

at

= 25 °C,

j

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1)

I

= 0.5 A,

L

Nominal load current (pin 4 to 1)
ISO Standard:

T

= 85 °C

S

Turn-on time to 90%
Turn-off time to 10%

R

= 24 Ω

L

Slew rate on
10 to 30%
Slew rate off

70 to 40%

V

= 13.5V unless otherwise specified

bb

V

= high

in

7)

V

V

V

OUT

OUT

ON

R

,

,

=

= 24 Ω

L

R

L

V

-

bb

= 24 Ω

V

OUT

= 0.5 V

T

= 25°C

j

T

= 150°C

j

V
V

OUT
OUT

R

ON

I

L(ISO)

t

on

t

off

dV /dt

-dV/dt

on

off

min typ max

--

--

0.16

--

0.2

0.4

1.7 -- -- A

--

--

60
60

100
150

-- 2 4 V/µs

-- 2 4 V/µs

Ω

µs

Input

Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage

T

= -40...+150°C

j

Input turn-off threshold voltage

T

= -40...+150°C

j

Input threshold hysteresis
Off state input current (pin 3)

On state input current (pin 3)

V

IN(on)

IN(off)

V

= -40...+150°C

T

j

= 3.0 V to

= -40...+150°C

T

j

Input resistance

= 1.2 V

V

bb

V

IN

V

IN(T+)

V

IN(T-)

∆V
I

IN(off)

I

IN(on)

R

IN

IN(T)

-3.0 --

V

bb

-- -- 3.5 V

1.5 -- -- V

-- 0.5 -- V

10 -- 60

10 -- 100

1.5 2.8 3.5 k

V

A

µ

A

µ

Ω

7

)

characterizes the MOSFET part of the device and may be higher than the shortcircuit current

I

L(ISO)

Semiconductor Group 3

of the whole device

I

L(SC)