Siemens BSP450 Datasheet
MiniPROFET
)
•
High-side switch
•
Short-circuit protection
•
Input protection
•
Overtemperature protection with hysteresis
•
Overload protection
•
Overvoltage protection
•
Switching inductive load
•
Clamp of negative output voltage with inductive loads
•
Undervoltage shutdown
•
Maximum current internally limited
•
Electrostatic discharge (ESD) protection
•
Reverse battery protection
1)
Mini PROFET® BSP 450
4
3
2
1
Package: SOT 223
Type
BSP 450
Ordering code
Q67000-S266
Pins
1234
OUT GND IN V
Maximum Ratings
Parameter Symbol Values Unit
Supply voltage range
Load current self-limited
Maximum input voltage
2)
Maximum input current
Inductive load switch-off energy dissipation
single pulse
I
= 0.5A ,
L
T
= 85°C
A
Operating temperature range
Storage temperature range
)
Max. power dissipation (DC)
Electrostatic discharge capability (ESD)
3
T
= 25 °C
A
4)
V
I
V
I
E
T
T
P
V
L
IN
bb
IN
AS
j
stg
tot
ESD
-0.3...48 V
I
L(SC
-5.0...
V
bb
±5mA
0.5 J
-40 ...+125
-55 ...+150
1.4 W
±1kV
bb
A
V
°C
Thermal resistance chip - soldering point:
chip - ambient
Voltage
ESDDiode
R
in
IN
3
1)
With resistor R
limited by connected load.
2)
At V
> Vbb, the input current is not allowed to exceed ±5 mA.
IN
3)
BSP 450 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V
4)
HBM according to MIL-STD 883D, Methode 3015.7
=150 Ω in GND connection, resistor in series with IN connections reverse load current
GND
Voltage
ESD
source
sensor
Logic
Overvoltage
protection
V
Logic
Charge pump
Level shifter
Rectifier
GND
2
Current
Signal GND
limit
unclamped
ind. loads
protection
Limit for
3)
Gate
Temperature
connection
bb
R
thJS
R
thJA
+ V
sensor
MINI-PROFET
bb
OUT
4
1
Load GND
Load
70
7
K/W
Semiconductor Group 1 06.96
BSP 450
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
T
at
= 25 °C,
j
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
I
= 0.5 A,
L
Nominal load current (pin 4 to 1)
ISO Standard:
T
= 85 °C
S
Turn-on time to 90%
Turn-off time to 10%
R
= 47 Ω
L
Slew rate on
10 to 30%
Slew rate off
70 to 40%
V
= 24V unless otherwise specified
bb
V
= high
in
5)
V
V
V
OUT
OUT
ON
R
,
,
=
= 47 Ω
L
R
L
V
-
bb
= 47 Ω
V
OUT
= 0.5 V
T
= 25°C
j
T
= 125°C
j
V
V
OUT
OUT
R
ON
I
L(ISO)
t
on
t
off
dV /dt
-dV/dt
on
off
min typ max
--
0.16
--
--
0.2
0.38
1.7 -- -- A
--
--
60
90
100
150
-- 2 4 V/µs
-- 2 4 V/µs
Ω
µs
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
V
= 18...30V
bb
T
= -25...+125°C
j
Input turn-off threshold voltage
V
= 18...30V
bb
T
= -25...+125°C
j
Input threshold hysteresis
Off state input current (pin 3)
On state input current (pin 3)
Input resistance
V
IN(off)
V
= -25...+125°C
T
j
= 3.0 V to
IN(on)
= -25...+125°C
T
j
= -25...+125°C
T
j
= 1.82 V
V
bb
V
IN
V
IN(T+)
V
IN(T-)
∆V
I
IN(off)
I
IN(on)
R
IN
IN(T)
-3.0 --
V
bb
V
-- -- 3.0 V
1.82 -- -- V
-- 0.1 -- V
20 -- --
-- -- 110
1.5 2.8 3.5 k
A
µ
A
µ
Ω
5)
characterizes the MOSFET part of the device and may be higher than the shortcircuit current
I
L(ISO)
Semiconductor Group 2
of the whole device
I
L(SC)
BSP 450
∆
Parameter and Conditions Symbol Values Unit
at
T
= 25 °C,
j
Operating Parameters
= 24V unless otherwise specified
V
bb
min typ max
Operating voltage
Undervoltage shutdown
Undervoltage restart
T
=-25...+125°C
j
T
=-25...+125°C
j
T
=-25...+125°C:
j
Undervoltage hysteresis
Standby current (pin 4),
Operating current (pin 2),
leakage current (pin 1)
V
V
in
= low
in
V
= high
in
= low
T
=-25...+100°C
j
T
=125°C
j
T
=-25...+125°C
j
T
=-25...+125°C
j
Protection Functions
Current limit (pin 4 to 1)
Overvoltage protection
I
bb
=4mA
T
j
T
T
= -25...+125°C
=-25...+125°C
j
Output clamp (ind. load switch off)
at
V
=
V
-
OUT
bb
V
ON(CL),
I
bb
= 4mA
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
T
= 85 °C, single pulse,
j Start
I
= 0.5 A,
L
V
bb
= 25°C
j
7)
= 12 V
V
bb(on)
V
bb(under)
V
bb(u rst)
V
∆
bb(under)
I
bb(off)
6)
I
GND
I
L(off)
I
L(SC)
V
bb(AZ)
V
ON(CL)
T
jt
T
jt
E
AS
12 -- 40 V
7 -- 10.5 V
-- -- 11 V
-- 0.4 -- V
-- 10 25
µ
50
-- 1 1.6 mA
-- -- 2
0.7
0.7
1.5
--
2
2.4
µ
48 -- -- V
--
72
-- V
135 150 -- °C
-- 10 -- K
-- -- 0.5 J
A
A
A
Reverse Battery
)
2
L
* (
8
T
= 25°C
A
V
>
V
OUT
= 125°C caused by temperature sense current
j
E
V
ON(CL)
V
ON(CL)-Vbb
)
AS
= ∫(V
bb
ON(CL)
-V
bb
-I
S
-V
ON
* iL(t) dt,
Reverse battery voltage
Continious reverse drain current
Drain-Source diode voltage
IF = 1 A,
6)
increase of standby current at T
7)
while demagnetizing load inductance, dissipated energy is
approx.
8)
Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.
V
in
E
= 1/2 * L * I
AS
= low
30 V
-- -- 1 A
-- -- 1.2 V
Semiconductor Group 3
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