Siemens BSP319 Datasheet
BSP 319
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
•
V
= 1.2 ...2.0 V
GS(th)
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on)
Package Marking
BSP 319 50 V 3.8 A 0.07 Ω SOT-223 BSP 319
Type Ordering Code Tape and Reel Information
BSP 319 Q67000-S273 E6327
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 29 °C
A
DC drain current, pulsed
T
= 25 °C
A
Avalanche energy, single pulse
I
= 3.8 A,
D
L
= 6.2 mH,
V
DD
T
= 25 °C
j
= 25 V,
R
GS
= 25
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
= 25 °C
A
I
D
I
Dpuls
E
AS
V
GS
V
gs
P
tot
3.8
15
90
±
14 V
±
20
1.8
A
mJ
W
Semiconductor Group 1 Sep-12-1996
BSP 319
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
T
j
T
stg
R
thJA
1)
R
thJS
-55 ... + 150 °C
-55 ... + 150
≤ 70 K/W
≤
10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
V
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 0 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
DS
DS
= 50 V,
= 50 V,
V
V
= 0 V,
GS
= 0 V,
GS
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
= 5 V,
GS
I
= 2.4 A
D
V
GS(th)
I
DSS
I
GSS
R
DS(on)
50 - -
1.2 1.6 2
-
-
0.1
10
1
100
- 10 100
- 0.06 0.07
µA
nA
Ω
Semiconductor Group 2 Sep-12-1996
BSP 319
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 2.4 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
I
= 0.3 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
3 8-
pF
- 750 1000
- 240 360
- 120 180
ns
- 20 30
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
= 5 V,
GS
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50 Ω
V
= 5 V,
GS
Fall time
V
R
DD
GS
= 30 V,
= 50 Ω
V
= 5 V,
GS
I
= 0.3 A
D
I
= 0.3 A
D
I
= 0.3 A
D
t
r
t
d(off)
t
f
- 55 85
- 210 260
- 120 160
Semiconductor Group 3 Sep-12-1996
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