Siemens BSP317 Datasheet
BSP 317
SIPMOS
®
Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
Type
BSP 317 -200 V -0.37 A 6
= -0.8...-2.0 V
GS(th)
V
DS
I
D
R
DS(on)
Ω
Package Marking
SOT-223
Type Ordering Code Tape and Reel Information
BSP 317 Q67000-S94 E6327
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
Drain-gate voltage
R
= 20 k
GS
Ω
Gate source voltage
Continuous drain current
T
= 25 °C
A
DC drain current, pulsed
T
= 25 °C
A
Power dissipation
T
= 25 °C
A
V
DS
V
DGR
V
GS
I
D
I
Dpuls
P
tot
-200 V
-200
±
20
-0.37
-1.48
1.8
A
W
Semiconductor Group 1 Sep-12-1996
BSP 317
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
T
j
T
stg
R
thJA
1)
R
thJS
-55 ... + 150 °C
-55 ... + 150
≤ 70 K/W
≤
10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
V
V
= 0 V,
GS
I
= -0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= -1 mA
Zero gate voltage drain current
V
= -200 V,
DS
V
= -200 V,
DS
V
= -130 V,
DS
V
V
V
GS
GS
GS
= 0 V,
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
T
= 25 °C
j
Gate-source leakage current
V
= -20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
= -10 V,
GS
I
= -0.37 A
D
V
GS(th)
I
DSS
I
GSS
R
DS(on)
-200 - -
-0.8 -1.1 -2
-
-
-
-0.1
-10
-
-1 µA
-100
-100
- -10 -100
- 3.4 6
nA
nA
Ω
Semiconductor Group 2 Sep-12-1996
BSP 317
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= -0.37 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
GS
= -30 V,
= 50
Ω
V
GS
= -10 V,
I
D
= -0.29 A
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
0.25 0.35 pF
- 270 360
- 50 75
- 15 25
ns
- 8 12
Rise time
V
R
DD
GS
= -30 V,
= 50
Ω
V
GS
Turn-off delay time
V
R
DD
GS
= -30 V,
= 50 Ω
V
GS
Fall time
V
R
DD
GS
= -30 V,
= 50 Ω
V
GS
= -10 V,
= -10 V,
= -10 V,
I
= -0.29 A
D
I
= -0.29 A
D
I
= -0.29 A
D
t
r
t
d(off)
t
f
- 30 45
- 80 110
- 90 120
Semiconductor Group 3 Sep-12-1996
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