Siemens BPW34S, BPW34 Datasheet

Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing
BPW 34 BPW 34 S BPW 34 S (E9087)
5.4
Cathode marking
4.0
3.7
0.6
0.4
0.6
0.4
0.8
0.6
1.4
1.8
Approx. weight 0.1 g
0.7
1.2
0.5
0.3
Photosensitive area
2.65 mm x 2.65 mm
0.35
0.2
0.8
0.6
4.9
4.5
4.3
0.6
0.4
0 ... 5˚
5.08 mm spacing
Chip position
2.2
0.6
0.4
1.9
3.5
3.0
GEO06643
BPW 34
feo06643
Wesentliche Merkmale
Speziell geeignet für Anwendungen
im Bereich von 400 nm bis 1100 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher
Packungsdichte
BPW 34 S/(E9087): geeignet für
Vapor-Phase Löten und IR-Reflow Löten (JEDEC level 4)
Anwendungen
Lichtschranken für Gleich- und
Wechsellichtbetrieb
IR-Fernsteuerungen
Industrieelektronik
“Messen/Steuern/Regeln”
Features
Especially suitable for applications from
400 nm to 1100 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing
density
BPW 34 S/(E9087): suitable for
vapor-phase and IR-reflow soldering (JEDEC level 4)
Applications
Photointerrupters
IR remote controls
Industrial electronics
For control and drive circuits
Semiconductor Group 1 1998-08-27
BPW 34, BPW 34 S
BPW 34 S (E9087)
0...0.1
0...0.1
1.1
0.9
0...5˚
1.5
1.7
GEO06863
1.1
0.9
0.2
0.2
4.0
0.1
3.7
0.1
Chip position
1.2
1.1
0.3
6.7
6.2
4.5
4.3
1.8
±0.2
0.9
0.7
Photosensitive area Cathode lead
2.65 mm x 2.65 mm
Chip position
1.2
1.1
0.3
feo06862
BPW 34 S
6.7
6.2
4.5
4.3
1.8
±0.2
0.9
0.7
Photosensitive area Cathode lead
2.65 mm x 2.65 mm
Typ Type
Bestellnummer Ordering Code
0...5˚
1.5
1.7
4.0
GEO06916
3.7
BPW 34 S (E9087)
BPW 34 Q62702-P73 BPW 34 S Q62702-P1602
BPW34S
BPW 34 S (E9087) Q62702-P1790
Semiconductor Group 2 1998-08-27
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