Siemens BGX50A Datasheet
Silicon Switching Diode Array BGX 50 A
● Bridge configuration
● High-speed switch diode chip
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BGX 50 A Q62702-G38U1s SOT-143
Maximum Ratings per Diode
Parameter Symbol Values Unit
Reverse voltage V
R 50 V
Peak reverse voltage VRM 70
Forward current IF 140 mA
Total power dissipation, T
S =74˚C Ptot 210 mW
Junction temperature Tj 150 ˚C
1)
Storage temperature range T
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 640 K/W
Junction - soldering point Rth JS ≤ 360
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
5.91
Electrical Characteristics
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BGX 50 A
UnitValuesParameter Symbol
min. typ. max.
F = 100 mA
R = 50 V
V
R = 50 V, TA = 150 ˚C
V
AC characteristics
R = 0, f = 1 MHz
V
F = 10 mA, IR = 10 mA, RL = 100 Ω
measured at I
R = 1 mA
Test circuit for reverse recovery time
V
F – – 1.3
R
I
–
–
C
D – – 1.5
rr ––6
t
–
–
0.2
100
VForward voltage per diode
µAReverse current per diode
pFDiode capacitance
nsReverse recovery time
Pulse generator: t
p = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns
t
≤ 1pF
C
Semiconductor Group 2
Loading...