Siemens BFY181S, BFY181P, BFY181H, BFY181ES Datasheet
-
£
°
-
°
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° C
HiRel NPN Silicon RF Transistor BFY 181
Features
HiRel Discrete and Microwave Semiconductor
¥
¥ For low noise, high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
¥ Hermetically sealed microwave package
¥
f
= 8 GHz,
T
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5611/006
ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions!
F
= 2.2 dB at 2 GHz
Micro-X1
Type Marking Ordering Code Pin Configuration Package
BFY 181 (ql)
see below C E B E Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1607
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1715
Chapter Order Instructions for ordering example)
(see
Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit
Collector-emitter voltage
Collector-emitter voltage,
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
V
T
S
= 0
BE
137 ° C
2)
V
V
V
V
I
I
P
CEO
CES
CBO
EBO
C
B
tot
12 V
20 V
20 V
2V
20 mA
1)
2
mA
175 mW
Junction temperature
Operating temperature range
Storage temperature range
T
j
T
op
T
stg
200
65 É + 200
65 É + 200
C
C
Thermal Resistance
Junction soldering point
1)
The maximum permissible base current for
2)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Draft A04 1998-04-01
2)
V
measurements is 15 mA (spot-measurement duration < 1 s).
FBE
R
th JS
< 360 K/W
Electrical Characteristics
m
m
m
m
BFY 181
Table 2 DC Characteristics at
T
= 25 ° C unless otherwise specified
A
Parameter Symbol Limit Values Unit
min. typ. max.
Collector-base cutoff current
V
= 20 V,
CB
I
= 0
E
Collector-emitter cutoff current
V
CE
= 12 V,
I
= 0.1 m A
B
3)
Collector-base cutoff current
V
= 10 V,
CB
I
= 0
E
Emitter-base cutoff current
V
= 2 V,
EB
I
= 0
C
Emitter-base cutoff current
V
= 2 V,
EB
I
= 0
C
Base-emitter forward voltage
I
= 15 mA, IC = 0
E
DC current gain
I
= 5 mA, VCE = 6 V
C
I
CBO
I
CEX
I
CBO
I
EBO
I
EBO
V
h
FBE
FE
-- 100
-- 100
A
A
-- 50 nA
-- 25
-- 0.5
A
A
--1V
55 100 175 -
3)
This test assures
V
(BR)CE0
> 12 V.
Semiconductor Group 2 Draft A04 1998-04-01
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