Siemens BF622 Datasheet
NPN Silicon High-Voltage Transistor BF 622
● Suitable for video output stages in TV sets
● High breakdown voltage
● Low collector-emitter saturation voltage
● Low capacitance
● Complementary type: BF 623 (PNP)
Type Ordering Code
BF 622 Q62702-F1052DA SOT-89
Marking
(tape and reel)
Pin Configuration
1 2 3
B C E
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 250 V
Collector-base voltage VCB0 250
Collector-emitter voltage, RBE = 2.7 kΩ VCER 250
Emitter-base voltage VEB0 5
Collector current I
C 50 mA
Peak collector current ICM 100
Total power dissipation, T
S = 120 ˚C Ptot 1W
Junction temperature Tj 150 ˚C
Storage temperature range T
stg – 65 … + 150
1)
Thermal Resistance
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 90 K/W
th JS ≤ 30
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
C = 1 mA
C = 10 µA, RBE = 2.7 kΩ
Collector-base breakdown voltage
C = 10 µA
min. typ. max.
V
(BR)CE0
V(BR)CER
V
(BR)CB0 250 – –
250
250
–
–
BF 622
UnitValuesParameter Symbol
VCollector-emitter breakdown voltage
–
–
Emitter-base breakdown voltage
E = 10 µA
Collector cutoff current
CB = 200 V
V
CB = 200 V, TA = 150 ˚C
V
Collector cutoff current
VCE = 200 V, RBE = 2.7 kΩ
CE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C
V
Emitter cutoff current
EB = 5 V
V
DC current gain
C = 25 mA, VCE = 20 V
1)
Collector-emitter saturation voltage
C = 10 mA, IB = 1 mA
Base-emitter saturation voltage
C = 10 mA, IB = 1 mA
1)
1)
V
(BR)EB0 5––
CB0
I
–
–
–
–
I
EB0 ––10
–
–
–
–
100
20
1
50
hFE 50 – –
VCEsat – – 0.5
VBEsat ––1
nA
µA
µAICER
–
V
AC characteristics
f
T – 100 –
C = 10 mA, VCE = 10 V, f = 20 MHz
C
CB = 30 V, f = 1 MHz
V
obo – 0.8 –
MHzTransition frequency
pFOutput capacitance
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
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