Siemens BF554 Datasheet

NPN Silicon RF Transistor BF 554

● For general small-signal RF applications

up to 300 MHz in amplifier,
mixer and oscillator circuits

Type Ordering Code

Marking

(tape and reel)

BF 554 Q62702-F1042CC SOT-23

Pin Configuration

1 2 3

B E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 20 V

Collector-base voltage VCB0 30
Emitter-base voltage V

EB0 5

Collector current IC 30 mA
Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW
Junction temperature T
Storage temperature range T

j 150 ˚C
stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 450 K/W

1)

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

Semiconductor Group 1

07.94

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BF 554

Parameter Symbol

DC Characteristics

V

(BR) CE0 20 – –

C = 1 mA, IB = 0

I

I

CB0 – – 100

CB = 20 V, IE = 0

V

h

FE 60 – 250

I

C = 1 mA, VCE = 10 V

V

BE – 0.7 –

C = 1 mA, VCE = 10 V

I

AC Characteristics

f

T – 250 –

C = 1 mA, VCE = 10 V, f = 100 MHz

I

C

cb – 0.6 –

CE = 10 V, VBE = 0 V, f = 1 MHz

V

UnitValues

min. typ. max.

VCollector-emitter breakdown voltage

nACollector cutoff current

–DC current gain

VBase-emitter voltage

MHzTransition frequency

pFCollector-base capacitance

C = 1 mA, VCE = 10 V

I

f = 200 kHz, g
f = 1 MHz, g
f = 100 MHz, g

C = 1 mA, VCE = 10 V, f = 0.5...10 MHz

I

S = 2 mS

S = 1.5 mS

S = 10 mS

F

–
–
–

g

22e –4–

1.5

1.2
3

–
–
–

dBNoise figure

µSOutput conductance

Semiconductor Group 2