Siemens BF550 Datasheet
PNP Silicon RF Transistor BF 550
● For common emitter amplifier stages
up to 300 MHz
● For mixer applications in AM/FM radios
and VHF TV tuners
● Low feedback capacitance
due to shield diffusion
● Controlled low output conductance
Type Ordering Code
Marking
(tape and reel)
BF 550 Q62702-F944LA SOT-23
Pin Configuration
1 2 3
B E C
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 40 V
Collector-base voltage VCB0 40
Emitter-base voltage V
EB0 4
Collector current IC 25 mA
Base current I
B 5
Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW
Junction temperature T
Storage temperature range T
j 150 ˚C
stg – 65 … + 150
Thermal Resistance
1)
Junction - ambient
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
2)
Semiconductor Group 1
Rth JA ≤ 450 K/W
07.94
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BF 550
Parameter Symbol
DC Characteristics
V
(BR) CE0 40 – –
C = 1 mA, IB = 0
I
Collector-base breakdown voltage
C = 10 µA, IE = 0
I
Emitter-base breakdown voltage
I
E = 10 µA, IC = 0
V
(BR) CB0 40 – –
V
(BR) EB0 4––
I
CB0 – – 100
VCB = 30 V, IE = 0
h
FE 50 – 250
I
C = 1 mA, VCE = 10 V
V
BE – 0.72 –
C = 1 mA, VCE = 10 V
I
AC Characteristics
UnitValues
min. typ. max.
VCollector-emitter breakdown voltage
nACollector cutoff current
–DC current gain
VBase-emitter voltage
C = 1 mA, VCE = 10 V, f = 100 MHz
I
CB = 10 V, VBE = 0 V, f = 1 MHz
V
Collector-emitter capacitance
V
CE = 10 V, VBE = 0 V, f = 1 MHz
V
CE = 10 V
C = 1 mA, f = 100 kHz, RS = 300 Ω
I
C = 2 mA, f = 100 MHz, RS = 60 Ω
I
Y parameters, common emitter
C = 1 mA, VCE = 10 V
I
f = 0.45 … 10 MHz
f = 500 kHz
f = 10 MHz
f
T – 350 –
C
cb – 0.33 –
C
ce – 0.67 –
F
11e
g
C11e
I y21e I
22e
C
g22e
g22e
–
–
–
–
–
–
–
–
2
3.4
550
17
35
1.3
5
5
–
–
–
–
–
–
8
10
MHzTransition frequency
pFCollector-base capacitance
dBNoise figure
µS
pF
mS
pF
µS
µS
Semiconductor Group 2
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