Siemens BCW68H, BCW68G, BCW68F, BCW67C, BCW67B Datasheet

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PNP Silicon AF Transistors BCW 67
BCW 68
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW 65, BCW 66 (NPN)
Type Ordering Code
Marking
(tape and reel)
BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H
DAs DBs DCs DFs DGs DHs
Q62702-C1560 Q62702-C1480 Q62702-C1681 Q62702-C1893 Q62702-C1322 Q62702-C1555
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BCW 67
BCW 68
Maximum Ratings Parameter Symbol Values Unit
BCW 67 BCW 68
Collector-emitter voltage V Collector-base voltage VCB0 Emitter-base voltage V Collector current I Peak collector current ICM A
CE0 V
32 45 45 60
EB0
C mA
55
800
1 Base current IB mA100 Peak base current I Total power dissipation, T
S = 79 ˚C Ptot mW
Junction temperature Tj ˚C Storage temperature range T
BM 200
330 150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
Rth JA 285 K/W
Junction - soldering point Rth JS 215
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
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