PNP Silicon AF Transistors BCW 67
BCW 68
● For general AF applications
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BCW 65, BCW 66 (NPN)
Type Ordering Code
Marking
(tape and reel)
BCW 67 A
BCW 67 B
BCW 67 C
BCW 68 F
BCW 68 G
BCW 68 H
DAs
DBs
DCs
DFs
DGs
DHs
Q62702-C1560
Q62702-C1480
Q62702-C1681
Q62702-C1893
Q62702-C1322
Q62702-C1555
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BCW 67
BCW 68
Maximum Ratings
Parameter Symbol Values Unit
BCW 67 BCW 68
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current I
Peak collector current ICM A
CE0 V
32 45
45 60
EB0
C mA
55
800
1
Base current IB mA100
Peak base current I
Total power dissipation, T
S = 79 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
BM 200
330
150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 285 K/W
Junction - soldering point Rth JS ≤ 215
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2