Siemens BCP72M Datasheet
BCP 72M
Semiconductor Group
Jun-05-19981
PNP Silicon AF Power Transistor
Preliminary data
• Drain switch for RF power amplifier stages
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
VPW05980
1
2
3
5
4
Type Marking Ordering Code Pin Configuration Package
BCP 72M PAs Q62702-C2517 1 = E 2 = C 3 = E SCT-5954 = B 5 = C
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage
V
CEO
10 V
Collector-base voltage
V
CBO
10
Emitter-base voltage
V
EBO
5
DC collector current
I
C
3 A
Peak collector current
I
CM
6
Base current 200 mA
I
B
Peak base current
I
BM
500
Total power dissipation,
T
S
≤ 94 °C
P
tot
1.7 W
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 88
K/W
Junction - soldering point
R
thJS
≤ 33
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
BCP 72M
Semiconductor Group
Jun-05-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol UnitValues
typ.min. max.
DC Characteristics
V
V
(BR)CEO
--10Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CBO
Collector-base breakdown voltage
I
C
= 100 µA,
I
B
= 0
--10
5 - -
V
(BR)EBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 8 V,
I
E
= 0
I
CBO
- - 100 nA
Collector cutoff current
V
CB
= 8 V,
I
E
= 0 ,
T
A
= 150 °C
I
CBO
- - 20 µA
Emitter cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
- - 100 nA
DC current gain 1)
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 500 mA,
V
CE
= 1 V
I
C
= 2 A,
V
CE
= 2 V
-
475
-
-
-
-
-
h
FE
25
85
50
Collector-emitter saturation voltage1)
I
C
= 2 A,
I
B
= 0.2 A
V-
V
CEsat
- 0.15
Base-emitter saturation voltage 1)
I
C
= 2 A,
I
B
= 0.2 A
- 1.2
V
BEsat
-
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V, f = 100 MHz
f
T
- 100 - MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
C
cb
- 100 - pF
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 2 1998-11-01
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