Siemens BCP72 Datasheet
BCP 72
PNP Silicon AF Power Transistor
Preliminary data
• For AF driver and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
Type Marking Ordering Code Pin Configuration Package
BCP 72 PAs Q62702- 1 = E 2 = C 3 = E 4 = B 5 = C SOT-23-5
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
Junction temperature
Storage temperature
T
= 99°C
S
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CEO
CBO
EBO
tot
j
stg
15 V
15
5
3 A
6
200 mA
500
1.7 W
150 °C
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤ 55 K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
R
thJS
≤
30
1 Dec-04-1996
BCP 72
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA,
C
I
B
= 0
Collector-base breakdown voltage
I
= 100 µA,
C
I
B
= 0
Base-emitter breakdown voltage
I
= 10 µA,
E
I
C
= 0
Collector cutoff current
V
V
CB
CB
= 15 V,
= 15 V,
I
= 0 ,
E
I
= 0 ,
E
T
= 25 °C
A
T
= 150 °C
A
Emitter cutoff current
V
= 4 V,
EB
I
C
= 0
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
15 - -
15 - -
5 - -
-
-
-
-
100 nA
20
- - 100
V
µA
nA
DC current gain
I
= 10 mA,
C
I
= 500 mA,
C
I
= 1 A,
C
V
V
CE
= 5 V
CE
V
CE
= 2 V
= 1 V
Collector-emitter saturation voltage 1)
I
= 2 A,
C
I
= 0.2 A
B
Base-emitter saturation voltage 1)
I
= 2 A,
C
I
= 0.2 A
B
AC Characteristics
Transition frequency
I
= 50 mA,
C
V
= 10 V, f = 100 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
1) Pulse test: t < 300µs; D < 2%
h
FE
V
CEsat
V
BEsat
f
T
C
cb
25
85
50
-
-
-
475
-
- 0.15 -
- - 1.2
- 100 -
- 50 -
-
V
mV
MHz
pF
Semiconductor Group
2 Dec-04-1996
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