Siemens BCP69-25, BCP69-16, BCP69-10, BCP69 Datasheet

PNP Silicon AF Transistor BCP 69

● For general AF application

● High collector current

● High current gain

● Low collector-emitter saturation voltage

● Complementary type: BCP 68 (NPN)

Type Ordering Code

Marking

(tape and reel)

BCP 69
BCP 69-10
BCP 69-16
BCP 69-25

BCP 69
BCP 69-10
BCP 69-16
BCP 69-25

Q62702-C2130
Q62702-C2131
Q62702-C2132
Q62702-C2133

Pin Configuration

1 2 3 4

B C E C

Package

SOT-223

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0

VCES

20
25

V

Collector-base voltage VCB0 25
Emitter-base voltage V
Collector current I

EB0 5

C 1A

Peak collector current ICM 2
Base current I

B 100 mA

1)

Peak base current IBM 200
Total power dissipation, T

S = 124 ˚C

2)

Ptot 1.5 W

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 72 K/W

Junction - soldering point Rth JS ≤ 17

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

01.97

Electrical Characteristics

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BCP 69

UnitValuesParameter Symbol

min. typ. max.

V

(BR)CE0 20 – –

C = 30 mA, IB = 0

Collector-emitter breakdown voltage

C = 10 µA, VBE = 0

Collector-base breakdown voltage

C = 10 µA, IB = 0

Emitter-base breakdown voltage

E = 10 µA, IB = 0

Collector-base cutoff current

CB = 25 V

V

CB = 25 V, TA = 150 ˚C

V

EB = 5 V, IC = 0

V

DC current gain

1)

IC = 5 mA, VCE = 10 V

C = 500 mA, VCE = 1 V BCP 69

I

BCP 69-10
BCP 69-16
BCP 69-25

C = 1 A, VCE = 1 V

I

V

(BR)CES 25 – –

V

(BR)CB0 25 – –

V

(BR)EB0 5––

CB0

I

–
–

I

EB0 – – 100

FE

h

50
85
85
100
160
60

–
–

–
–
100
160
250
–

100
100

–
375
160
250
375
–

VCollector-emitter breakdown voltage

nA

µA

nAEmitter-base cutoff current

–

Collector-emitter saturation voltage

1)

IC = 1 A, IB = 100 mA

Base-emitter voltage

1)

IC = 5 mA, VCE = 10 V

C = 1 A, VCE = 1 V

I

AC characteristics

C = 100 mA, VCE = 5 V, f = 100 MHz

I

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2

CEsat – – 0.5

V

V

BE

–
–

f

T – 100 –

0.6
–

V

–
1

MHzTransition frequency