Siemens BCP56M, BCP54M, BCP55M Datasheet

BCP 54M ... BCP 56M

1 Au -11-1998

Semiconductor Group

NPN Silicon AF Transistors

• For AF driver and output stages

• High collector current

• Low collector-emitter saturation voltage

• Complementary types: BCP 51M...BCP 53M(PNP)

VPW05980

1

2

3

5

4

Type Marking Ordering Code PackagePin Configuration

5 = C4 n.c.BAs
BEs
BHs

BCP 54M
BCP 55M
BCP 56M

1 = B 2 = C 3 = E SCT-595Q62702-C2595
Q62702-C2606
Q62702-C2607

Maximum Ratings
Parameter

Symbol BCP 54M BCP 55M BCP 56M Unit

Collector-emitter voltage

V

CEO

45 60 80 V

Collector-base voltage

V

CBO

45 60 100

Emitter-base voltage

V

EBO

5 5 5

DC collector current

I

C

1 mA

Peak collector current

I

CM

1.5 A

Base current

I

B

100 mA

Peak base current

I

BM

200

Total power dissipation,

T

S

≤ 77 °C

P

tot

1.7 W

Junction temperature

T

j

150 °C

Storage temperature

T

st

g

-65...+150

Thermal Resistance

≤98

Junction ambient

1)

R

thJA

K/W

Junction - soldering point

R

thJS

≤43

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group 1 1998-11-01

BCP 54M ... BCP 56M

2 Au -11-1998

Semiconductor Group

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Parameter

Symbol UnitValues

typ. max.min.

DC Characteristics

V

(BR)CEO

45
60

80

-

-

-

-

-

-

V
BCP 54M
BCP 55M
BCP 56M

Collector-emitter breakdown voltage

I

C

= 10 mA,

I

B

= 0

BCP 54M
BCP 55M
BCP 56M

V

(BR)CBO

45
60

100

Collector-base breakdown voltage

I

C

= 100 µA,

I

B

= 0

-

-

-

-

-

-

-Emitter-base breakdown voltage

I

E

= 10 µA,

I

C

= 0

-5

V

(BR)EBO

nACollector cutoff current

V

CB

= 30 V,

I

E

= 0

100

I

CBO

--

µACollector cutoff current

V

CB

= 30 V,

I

E

= 0 ,

T

A

= 150 °C

20- -

I

CBO

-DC current gain 1)

I

C

= 5 mA,

V

CE

= 2 V

-

h

FE

-25

-250

h

FE

DC current gain 1)

I

C

= 150 mA,

V

CE

= 2 V

40 -

--

h

FE

25DC current gain 1)

I

C

= 500 mA,

V

CE

= 2 V

-

V0.5--

V

CEsat

Collector-emitter saturation voltage1)

I

C

= 500 mA,

I

B

= 50 mA

Base-emitter voltage 1)

I

C

= 500 mA,

V

CE

= 2 V

V

BE(ON)

-- 1

AC Characteristics

MHz

Transition frequency

I

C

= 50 mA,

V

CE

= 10 V, f = 100 MHz

- 100

f

T

-

1) Pulse test: t ≤ 300µs, D = 2%

Semiconductor Group 2 1998-11-01