Q62702-C1504
PNP Silicon AF Transistors |
BC 807 |
|
BC 808 |
●For general AF applications
●High collector current
●High current gain
●Low collector-emitter saturation voltage
●Complementary types: BC 817, BC 818 (NPN)
Type |
Marking |
Ordering Code |
|
|
Pin Configuration |
|
Package1) |
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1 |
|
2 |
|
3 |
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BC 807-16 |
5As |
Q62702-C1735 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SOT-23 |
|
|
B |
E |
C |
|||||||||||||
BC 807-25 |
5Bs |
Q62702-C1689 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BC 807-40 |
5Cs |
Q62702-C1721 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BC 808-16 |
5Es |
Q62702-C1736 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BC 808-25 |
5Fs |
Q62702-C1504 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BC 808-40 |
5Gs |
Q62702-C1692 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1) For detailed information see chapter Package Outlines.
Semiconductor Group |
1 |
5.91 |
BC 807
BC 808
Maximum Ratings
Parameter |
Symbol |
|
Values |
Unit |
|
|
|
BC 807 |
|
BC 808 |
|
|
|
|
|
||
|
|
|
|
|
|
Collector-emitter voltage |
VCE0 |
45 |
|
25 |
V |
|
|
|
|
|
|
Collector-base voltage |
VCB0 |
50 |
|
30 |
|
|
|
|
|
|
|
Emitter-base voltage |
VEB0 |
5 |
|
5 |
|
|
|
|
|
|
|
Collector current |
IC |
|
500 |
mA |
|
|
|
|
|
|
|
Peak collector current |
ICM |
|
1 |
A |
|
|
|
|
|
|
|
Base current |
IB |
|
100 |
mA |
|
|
|
|
|
|
|
Peak base current |
IBM |
|
200 |
|
|
|
|
|
|
|
|
Total power dissipation, TC = 79 ˚C |
Ptot |
|
330 |
mW |
|
|
|
|
|
|
|
Junction temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
|
|
Storage temperature range |
Tstg |
|
– 65 … + 150 |
|
|
|
|
|
|
|
|
Thermal Resistance |
|
|
|
|
|
|
|
|
|
|
|
Junction - ambient1) |
Rth JA |
|
≤ 285 |
K/W |
|
Junction - soldering point |
Rth JS |
|
≤ 215 |
|
|
|
|
|
|
|
|
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
2 |