Siemens BC638, BC640, BC636 Datasheet
PNP Silicon AF Transistors BC 636
… BC 640
● High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 635, BC 637,
BC 639 (NPN)
2
3
1
Type Ordering CodeMarking
Pin Configuration
Package
1 2 3
BC 636
BC 638
BC 640
– TO-92
Q68000-A3365
Q68000-A3366
Q68000-A3367
E C B
If desired, selected transistors, type BC 6 ★★ –10 (hFE = 63 … 160), or BC 6 ★★ –16
FE = 100 … 250) are available. Ordering codes upon request.
(h
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
Maximum Ratings
BC 636
… BC 640
Parameter Values Unit
Symbol
BC 638BC 636 BC 640
Collector-emitter voltage V
Collector-base voltage
Emitter-base voltage
Collector current A
Peak collector current
Base current mA100
Peak base current 200
Total power dissipation, T
C = 90 ˚C
Junction temperature ˚C
Storage temperature range
V
CE0
VCB0
VEB0
IC
ICM
45 80
60
6045 100
5
1
1.5
IB
IBM
1)
Ptot
Tj
Tstg
0.8 (1)
150
– 65 … + 150
W
Thermal Resistance
Junction - ambient
Junction - case
2)
1)
Rth JA
Rth JC
≤ 156 K/W
≤ 55
1)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 2
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