Siemens BC617, BC618 Datasheet
BC 617
BC 618
NPN Silicon Darlington Transistors BC 617
BC 618
● High current gain
● High collector current
2
3
1
Type Marking
Ordering Code
Pin Configuration
Package
1 2 3
BC 617
BC 618
– TO-92
Q62702-C1137
Q62702-C1138
C B E
Maximum Ratings
Parameter Symbol
Collector-emitter voltage V
CE0 40 V
Collector-base voltage VCB0 50
Emitter-base voltage V
EB0
Collector current IC mA
Peak collector current ICM
Base current I
B
Peak base current IBM
Total power dissipation, TC =66 ˚C Ptot mW
Values
BC 617 Unit
BC 618
55
80
12
500
800
100
200
625
1)
Junction temperature T
Storage temperature range T
j ˚C
stg – 65 … + 150
150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Junction - case
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
Semiconductor Group 1
Rth JC ≤ 135
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 617
BC 618
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA
BC 617
BC 618
Collector-base breakdown voltage
C = 100 µA
(BR)CB0
V
BC 617
BC 618
V
Emitter-base breakdown voltage
E = 10 µA
Collector cutoff current
(BR)EB0 12 – –
I
CB0
VCB = 40 V BC 617
CB = 60 V BC 618
V
CB = 40 V, TA = 150 ˚C BC 617
V
CB = 60 V, TA = 150 ˚C BC 618
V
40
55
50
80
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
10
10
VCollector-emitter breakdown voltage
nA
nA
µA
µA
I
EB0 – – 100
EB = 4 V
V
DC current gain
C = 100 µA; VCE = 5 V BC 617
BC 618
C = 10 mA; VCE = 5 V
1)
BC 617
BC 618
C = 200 mA; VCE = 5 V
1)
BC 617
BC 618
C = 1000 mA; VCE = 5 V
1)
BC 617
BC 618
Collector-emitter saturation voltage
C = 200 mA; IB = 0.2 mA
Base-emitter saturation voltage
C = 200 mA; IB = 0.2 mA
1)
1)
VCEsat – – 1.1
VBEsat – – 1.6
4000
2000
10000
4000
20000
10000
10000
4000
–
–
–
–
–
–
–
–
–
–
–
–
70000
50000
–
–
nAEmitter cutoff current
–hFE
V
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 2
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