Siemens BC517 Datasheet

BC 517

NPN Silicon Darlington Transistor BC 517

● High current gain

● High collector current

● Complementary type: BC 516 (PNP)

2

3

1

Package

Type Ordering CodeMarking

1

Pin Configuration

1 2 3

BC 517 Q62702-C825– TO-92

C B E

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 30 V

Collector-base voltage VCB0 40
Emitter-base voltage V
Collector current I

EB0 10

C 500 mA

Peak collector current ICM 800

1)

Base current I

B 100

Peak base current IBM 200
Total power dissipation, T

C = 66 ˚C Ptot 625 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

Thermal Resistance

Junction - ambient Rth JA ≤ 200 K/W
Junction - case

1)

For detailed information see chapter Package Outlines.

2)

Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

2)

Rth JC ≤ 135

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BC 517

UnitValuesParameter Symbol

min. typ. max.

V

(BR)CE0 30 – –

C = 10 mA

Collector-base breakdown voltage

C = 100 µA

Emitter-base breakdown voltage

E = 10 µA

Collector cutoff current

CB = 30 V

V

CB = 30 V, TA = 150 ˚C

V

EB = 4 V

V

V

(BR)CB0 40 – –

V

(BR)EB0 10 – –

CB0

I

–
–

I

EB0 – – 100

–
–

100
10

hFE 30 000 – –

1

C = 20 mA; VCE = 2 V

Collector-emitter saturation voltage

C = 100 mA; IB = 0.1 mA

Base-emitter voltage

C = 10 mA; VCE = 5 V

)

1)

1)

VCEsat ––1

VBE – – 1.4

VCollector-emitter breakdown voltage

nA

µA

nAEmitter cutoff current

–DC current gain

V

AC characteristics

C = 50 mA, VCE = 5 V, f = 20 MHz

CB = 10 V, f = 1 MHz

V

f

T – 150 –

C

obo – 3.5 –

MHzTransition frequency

pFOutput capacitance

1)

Pulse test: t ≤ 300 µs, D ≤ 2%.

Semiconductor Group 2