NPN Silicon AF Transistors BC 337
BC 338
● High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 327, BC 328 (PNP)
2
3
1
Type Marking
BC 337
– TO-92
BC 337-16
BC 337-25
BC 337-40
BC 338
BC 338-16
BC 338-25
BC 338-40
Ordering Code
Q62702-C313
Q62702-C313-V3
Q62702-C313-V1
Q62702-C313-V2
Q62702-C314
Q62702-C314-V1
Q62702-C314-V2
Q62702-C314-V3
Pin Configuration
1 2 3
C B E
Package
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
Maximum Ratings
BC 337
BC 338
Parameter Symbol
Collector-emitter voltage V
CE0 45 V
Collector-base voltage VCB0 50
Emitter-base voltage V
EB0
Collector current IC mA
Peak collector current ICM A
Base current I
B mA
Peak base current IBM
Total power dissipation, T
Junction temperature T
Storage temperature range T
C = 66 ˚C Ptot mW
j ˚C
stg – 65 … + 150
Values
BC 337 Unit
BC 338
25
30
5
800
1
100
200
625
150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Junction - case
1)
Rth JC ≤ 135
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 2