BBY 58-02W
Semiconductor Group
Jul-30-19981
Silicon Tuning Diode
Preliminary data
• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series inductance
• Designed for low tuning voltage operation
for VCO’s in mobile communications equipment
• For low frequency control elements
such as TCXOs and VCXOs
• Very low capacitance spread
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BBY 58-02W 8 Q62702-B916 1 = C 2 = A SCD-80
Maximum Ratings
Parameter
Symbol Value Unit
Diode reverse voltage
V
R
10 V
mAForward current 20
I
F
Operating temperature range
T
op
-55 ...+150 °C
Storage temperature
T
stg
-55 ...+150
Semiconductor Group 1 1998-11-01
BBY 58-02W
Semiconductor Group
Jul-30-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R
= 8 V
I
R
- - 1 nA
Reverse current
V
R
= 8 V,
T
A
= 65 °C
I
R
- - 100
AC characteristics
pF
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 3 V, f = 1 MHz
V
R
= 4 V, f = 1 MHz
17.5
-
-
5.5
19.3
-
-
6.6
18.3
12.35
8.6
6
C
T
Capacitance ratio
V
R
= 1 V,
V
R
= 3 V, f = 1 MHz
C
T1
/
C
T3
2.15 ---
Capacitance ratio
V
R
= 1 V,
V
R
= 4 V, f = 1 MHz
C
T1
/
C
T4
3.05 3.32.8
Series resistance
V
R
= 1 V, f = 470 MHz
Ω-
r
s
- 0.25
Case capacitance
f
= 1 MHz
0.09 pF--
C
C
nHSeries inductance chip to ground
L
s
- 0.6 -
Semiconductor Group 2 1998-11-01
BBY 58-02W
Semiconductor Group
Jul-30-19983
Temperature coefficient of the diode
capacitance
T
Cc
= f (
V
R
)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
R
-4
10
-3
10
-2
10
1/°C
T
Cc
Diode capacitance
CT = f (V
R
)
f
= 1MHz
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
V
R
0
4
8
12
16
20
24
pF
32
C
T
Normalized diode capacitance
C
(TA)
/
C
(25°C)
= f (
T
A
)
f
= 1MHz,
V
R
= Parameter
-30 -10 10 30 50 70
°C
100
T
A
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
-
1.04
C
TA
/
C
25°C
1V
4V
Semiconductor Group 3 1998-11-01
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