Siemens BB 837 Technical data
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Semiconductor Group
Mar-27-1998
1
Silicon Tuning Diode
Preliminary data
• Extented frequency range up to 2.8 GHz
special design for use in TV-sat indoor units
• High capacitance ratio
Type Marking Ordering Code Pin Configuration Package
BB 837
BB 837 M Q62702-B0904 1=C 2=A
SOD-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage V
Peak reverse voltage (R ≥ 5kΩ) V
Forward current I
Operating temperature range T
Storage temperature T
R
RM
F
op
stg
30 V
35
20 mA
55 ...+150
55 ...+150
°C
BB 837
Semiconductor Group
Mar-27-1998
2
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 25 V, f = 1 MHz
VR = 28 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1V to 28V, f = 1 MHz
VR = 1V to 28V, f = 1 MHz
Series resistance
VR = 1 V, f = 470 MHz
I
R
I
R
C
T
CT1/C
r
s
T25
T28
T
- - 10 nA
- - 200
6
-
0.45
6.6
0.55
0.54
7.2
-
0.65
-12-
9.7 -12.2
--∆CT/C
5
pF
-CT1/C
%Capacitance matching
Ω- 1.5 -
Series inductance L
s
- 1.4 - nH
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