Siemens BAV70S Datasheet
BAV 70S
Silicon Switching Diode Array
• For high speed switching applications
• Common cathode
• Internal (galvanic) isolated Diodes Arrays
in one package
Type Marking Ordering Code Pin Configuration Package
BAV 70S A4s Q62702-A1097 1/4=A1 2/5=A2 3/6=C1/2 SOT-363
Maximum Ratings per Diode
Parameter Symbol Values Unit
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total Power dissipation
T
= 85 °C
S
Junction temperature
Storage temperature
V
V
I
I
P
T
T
R
RM
F
FS
tot
j
stg
70 V
70
200 mA
4.5 A
mW
250
150 °C
- 65 ... + 150
Thermal Resistance
Junction ambient
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
1)
R
R
thJA
thJS
≤
530 K/W
≤ 260
Semiconductor Group 1 Nov-28-1996
BAV 70S
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics per Diode
Breakdown voltage
I
= 100 µA
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 50 mA
F
I
= 150 mA
F
Reverse current
V
= 70 V,
R
V
= 25 V,
R
V
= 70 V,
R
T
= 25 °C
A
T
= 150 °C
A
T
= 150 °C
A
V
V
I
R
(BR)
F
70 - -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
mV
715
855
1000
1250
µA
2.5
30
50
AC characteristics per Diode
Diode capacitance
V
= 0 V, f = 1 MHz
R
Reverse recovery time
I
= 10 mA,
F
t
measured at 1 mA
rr
I
= 10 mA,
R
R
= 100
L
Ω
C
t
D
pF
- - 1.5
rr
ns
- - 6
Semiconductor Group 2 Nov-28-1996
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