Siemens BAV70 Datasheet

Silicon Switching Diode Array BAV 70

● For high-speed switching

● Common cathode

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAV 70 Q68000-A6622A4s SOT-23

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage V

R 70 V

Peak reverse voltage VRM 70
Forward current IF 200 mA
Surge forward current, t= 1
Total power dissipation, T

µs IFS 4.5 A

S =35˚C Ptot 250 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 600 K/W

Junction - soldering point Rth JS ≤ 460

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2.

Semiconductor Group 1

5.91

Electrical Characteristics per Diode

I

I

I
I
I
I

A = 25 ˚C, unless otherwise specified.

at T

BAV 70

Parameter Symbol

DC characteristics

V

(BR) 70 – –

(BR) = 100 µA

V

F

F = 1mA
F = 10 mA
F = 50 mA
F = 150 mA

IR

R = 70 V

V

R = 25 V, TA = 150 ˚C

V

R = 70 V, TA = 150 ˚C

V

AC characteristics

C

D – – 1.5

R = 0 V, f = 1 MHz

V

min. typ. max.

–
–
–
–

–
–
–

–
–
–
–

–
–
–

715
855
1000
1250

2.5
30
50

UnitValues

VBreakdown voltage

mVForward voltage

µAReverse current

pFDiode capacitance

F = 10 mA, IR = 10 mA, RL = 100 Ω

measured at I

R = 1 mA

Test circuit for reverse recovery time

Pulse generator: t

p = 100 ns, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

rr ––6

t

≤ 1pF

C

nsReverse recovery time

Semiconductor Group 2