Siemens BAV199 Datasheet

Silicon Low Leakage Diode Array BAV 199

● Low-leakage applications

● Medium speed switching times

● Connected in series

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAV 199 Q62702-A921JYs SOT-23

Maximum Ratings per Diode
Parameter Symbol Values Unit

Reverse voltage V

R 70 V

Peak reverse voltage VRM 70
Forward current IF 200 mA
Surge forward current, t= 1
Total power dissipation, T

µs IFS 4.5 A

S =31˚C Ptot 330 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 500 K/W

Junction - soldering point Rth JS ≤ 360

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics per Diode

I

I

I
I
I
I

A = 25 ˚C, unless otherwise specified.

at T

BAV 199

Parameter Symbol

DC characteristics

V

(BR) 70 – –

(BR) = 100 µA

V

F

F = 1mA
F = 10 mA
F = 50 mA
F = 150 mA

R

I

R = 70 V

V

R = 70 V, TA = 150 ˚C

V

AC characteristics

C

D –2–

R = 0 V, f = 1 MHz

V

min. typ. max.

–
–
–
–

–
–

–
–
–
–

–
–

900
1000
1100
1250

5
80

UnitValues

VBreakdown voltage

mVForward voltage

nAReverse current

pFDiode capacitance

F = 10 mA, IR = 10 mA, RL = 100 Ω

measured at I

R = 1 mA

Test circuit for reverse recovery time

Pulse generator: t

p = 5 µs, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

rr – 0.5 3

t

≤ 1pF

C

µsReverse recovery time

Semiconductor Group 2