Siemens BAV170 Datasheet

Silicon Low Leakage Diode Array BAV 170

● Low leakage applications

● Medium speed switching times

● Common cathode

Type Ordering Code

Marking

Pin Configuration

Package

(tape and reel)

BAV 170 Q62702-A920JXs SOT-23

Maximum Ratings
Parameter Symbol Values Unit

Reverse voltage V

R 70 V

Peak reverse voltage VRM 70
Forward current IF 200 mA
Surge forward current, t= 1
Total power dissipation, T

µs IFS 4.5 A

S =35˚C Ptot 250 mW

Junction temperature Tj 150 ˚C
Storage temperature range T

stg – 65 … + 150

1)

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 600 K/W

Junction - soldering point Rth JS ≤ 460

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics per Diode

I

I

I
I
I
I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BAV 170

UnitValuesParameter Symbol

min. typ. max.

(BR) = 100 µA

F = 1mA
F = 10 mA
F = 50 mA
F = 150 mA

R = 70 V

V

R = 70 V, TA = 150 ˚C

V

AC characteristics

R = 0 V, f = 1 MHz

V

F = 10 mA, IR = 10 mA, RL = 100 Ω

measured at I

R = 1 mA

V

(BR) 70 – –

V

F

–
–
–
–

R

I

–
–

C

D –2–

rr – 0.5 3

t

–
–
–
–

–
–

900
1000
1100
1250

5
80

VBreakdown voltage

mVForward voltage

nAReverse current

pFDiode capacitance

µsReverse recovery time

Test circuit for reverse recovery time

Pulse generator: t

Semiconductor Group 2

p = 5 µs, D = 0.05 Oscillograph: R = 50 Ω
r = 0.6 ns, Rj = 50 Ω tr = 0.35 ns

t

≤ 1pF

C