Siemens BAT68W, BAT68-06W, BAT68-05W, BAT68-04W Datasheet
BAT 68W
Silicon Schottky Diodes
Preliminary data
• For mixer applications in the VHF/UHF range
• For high speed switching
BAT 68-04W BAT68-05W BAT68-06W
Type Marking Ordering Code Pin Configuration Package
BAT 68-04W 84s Q62702- 1 = A1 2 = K2 3 = K1/A2 SOT-323
BAT 68-05W 85s Q62702- 1 = A1 2 = A2 3 = K1/K2 SOT-323
BAT 68-06W 86s Q62702- 1 = K1 2 = K2 3 = A1/A2 SOT-323
BAT 68W 83s Q62702- 1 = A n.c. 3 = K SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Total power dissipation, BAT68W
T
S
=97°C
Total power dissipation, BAW68-04...06W
Junction temperature
Operating temperature range
Storage temperature
T
S
=92°C
V
I
P
P
T
T
T
F
R
tot
tot
j
op
stg
8 V
130 mA
150 mW
150
150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction - ambient, BAT68W
R
thJA
≤ 435 K/W
Junction - ambient, BAT68-04W...06W
R
Junctui - soldering point, BAT68W R
Junction - soldering point, BAT68-04W...06W
R
thJA
thJS
thJS
≤
550
≤
355
390
Semiconductor Group 1 Dec-20-1996
BAT 68W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
= 100 µA
(BR)
Reverse current
V
= 1 V,
R
V
= 1 V,
R
T
= 25 °C
A
T
= 60 °C
A
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
Diode capacitance
V
= 1 V, f = 1 MHz
R
Differential forward resistance
V
I
V
C
R
R
(BR)
F
T
F
8 - -
-
-
340
-
-
318
390
0.1
1.2
340
500
- - 1
V
µA
mV
pF
Ω
I
= 5 mA
F
Forward current
I
F
= f (
T
*;
T
)
A
S
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68W
200
mA
160
I
F
140
120
100
80
60
40
T
T
A
S
- - 10
Forward current
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68-04W, -05W, -06W
200
mA
160
I
F
140
120
100
80
60
40
I
F
= f (
T
*;
T
)
A
S
T
T
A
S
20
0
0 20 40 60 80 100 120 °C 150
TA,T
S
20
0
0 20 40 60 80 100 120 °C 150
TA,T
S
Semiconductor Group 2 Dec-20-1996
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